期刊
ADVANCED MATERIALS
卷 27, 期 37, 页码 5534-5540出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502278
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- Human Resources Development program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korea government Ministry of Trade, Industry and Energy [20124010203270]
- [IBS-R011-D1]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20144010200740] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Science, ICT & Future Planning, Republic of Korea [IBS-R011-D1-2015-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of approximate to 1.0 and a high external quantum efficiency (approximate to 52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.
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