Optimization of energy-storage performance of Mn-doped BaZr0.2Ti0.8O3 lead-free ferroelectric thin films by the sol-gel method

Dielectric capacitors have been widely studied for energy storage applications in pulsed power electronic and electrical systems due to their fast charge/discharge rate and high power density. In this work, the lead-free ferroelectric BaZr0.2Ti0.8O3-0.02 MnO2 (BZT-0.02 Mn) thin films are prepared by a sol-gel method on Pt(111)/Ti/SiO2/Si(100) substrates. The crystal structure, surface morphology, ferroelectric properties, leakage behavior, energy storage properties and stability of the films are systematically investigated. The BZT-0.02 Mn thin films exhibit relatively high recoverable energy storage density of 32.3 J/cm(3) and energy storage efficiency of 62% at 3700 kV/cm. In addition, the frequency insensitive stability from 0.1 kHz to 10 kHz, long-term fatigue resistance up to 10(7) switching cycles and high temperature stability in a range of 20 degrees C to 120 degrees C are also achieved. The results show that the BZT-0.02 Mn thin film is a promising lead-free dielectrics for application in energy storage.

Automated summary

In this study, lead-free ferroelectric thin films BZT-0.02 Mn were prepared by a sol-gel method. The films exhibited high energy storage density and efficiency, as well as frequency insensitive stability, long-term fatigue resistance, and high temperature stability. The results suggest that BZT-0.02 Mn thin films are promising for energy storage applications.