Electronic structure and layer-dependent magnetic order of a new high-mobility layered antiferromagnet KMnBi

Room-temperature two-dimensional antiferromagnetic (AFM) materials are highly desirable for various device applications. In this letter, we report the low-energy electronic structure of KMnBi measured by angle-resolved photoemission spectroscopy, which confirms an AFM ground state with the valence band maximum located at -100 meV below the Fermi level and small hole effective masses associated with the sharp band dispersion. Using complementary Raman, atomic force microscope and electric transport measurement, we systematically study the evolution of electric transport characteristics of micro-mechanically exfoliated KMnBi with varied flake thicknesses, which all consistently reveal the existence of a probable AFM ground state down to the quintuple-layer regime. The AFM phase transition temperature ranges from 220 K to 275 K, depending on the thickness. Our results suggest that with proper device encapsulation, multilayer KMnBi is indeed a promising 2D AFM platform for testing various theoretical proposals for device applications.

Automated summary

We report the low-energy electronic structure of KMnBi, a two-dimensional antiferromagnetic material, measured by angle-resolved photoemission spectroscopy. Electric transport measurement and other techniques are used to study the evolution of electric transport characteristics with varied flake thicknesses, which consistently reveal the existence of a probable antiferromagnetic ground state. The phase transition temperature ranges from 220 K to 275 K, depending on the thickness. Our results suggest that multilayer KMnBi is a promising 2D antiferromagnetic platform for device applications.