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Article
Engineering, Electrical & Electronic
Taylor Moule et al.
Summary: The breakdown mechanisms of >1kV beta-Ga2O3 trench-MOS Schottky-barrier diodes were investigated under step-stressed voltage measurements, revealing two leakage mechanisms: barrier tunneling and non-reversible soft-breakdown events. The change in dominant leakage mechanism under reverse bias stress has implications for the voltage ratings and lifetimes of devices with oxide layers for enhanced breakdown fields.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Feng Zhou et al.
Summary: The technical progress of Ga2O3 power diodes is limited by a lack of performance evaluation and reliability validation, but they have shown great potential in high-efficiency, high-power, and high-reliability applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Review
Multidisciplinary Sciences
Hogyoung Kim
Summary: This article provides a review on the recent studies in the control and understanding of metal contacts to beta-Ga2O3, particularly in terms of the barrier formation. The review suggests that understanding the current transport mechanisms of metal contacts to beta-Ga2O3 more thoroughly is necessary to enhance the performance, stability and reliability of beta-Ga2O3 based devices.
SN APPLIED SCIENCES
(2022)
Article
Engineering, Electrical & Electronic
Yuangang Wang et al.
Summary: By implementing a composite terminal structure with a p-NiO junction termination extension and a small-angle beveled field plate, high-performance p-NiO/ss-Ga2O3 heterojunction diodes were successfully demonstrated. This structure significantly increases the breakdown voltage of ss-Ga2O3 and achieves low ON-resistance, making it a promising candidate for various applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Crystallography
Maolin Zhang et al.
Summary: This review article summarizes recent advances in the experimental and theoretical research on β-Ga2O3-based power devices, providing comprehensive guidance for further development by discussing the operating mechanisms and obstacles to be addressed.
Article
Nanoscience & Nanotechnology
Shuchi Kaushik et al.
Summary: This study demonstrates plasmonic-enhanced deep-UV photodetectors based on h-BN nanosheets. The presence of Al nanoparticles on h-BN layers leads to a significant enhancement in the performance of the photodetectors, without affecting their speed and UV-visible rejection ratio.
ACS APPLIED NANO MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
N. Manikanthababu et al.
Summary: In this study, Pt/PtOx/beta -Ga2O3 vertical Schottky barrier diodes were irradiated with 120 MeV Au (9+) swift heavy ions, and in situ I-V and C-V measurements were performed. The results show that the Schottky barrier height and ideality factor remain relatively stable within a certain range of fluence, but undergo changes when the fluence reaches a certain value, accompanied by a decrease in doping concentration and an increase in defects.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Jian-Sian Li et al.
Summary: Vertical heterojunction NiO/beta n-Ga2O/n(+) Ga2O3 rectifiers with extended NiO layer beyond the rectifying contact exhibit high breakdown voltage and power figure-of-merit. Optimization of the design can reduce the peak electric field at the edge of the rectifying contact.
APPLIED PHYSICS LETTERS
(2022)
Review
Physics, Applied
Xueqiang Ji et al.
Summary: Gallium oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a large dielectric constant and excellent physical and chemical stability. Despite the difficulties with p-type doping, Ga2O3 is irreplaceable for high-power electronic devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Physics, Applied
Sahin Sorifi et al.
Summary: In this study, a 2D/3D vertical van der Waals p-n heterojunction based on p-type gallium selenide (GaSe) and n-type gallium oxide (Ga2O3) is fabricated and characterized. The conduction band offset at the GaSe/Ga2O3 hetero-interface is estimated using Kelvin Probe Force Microscopic (KPFM) measurements, and the band diagrams are designed accordingly. The diode-like behavior observed in the current-voltage measurements is attributed to the type-II band alignment at the p-n junction interface. The heterostructure exhibits high current rectification ratio and promising photoresponse properties, making it a potential candidate for efficient optoelectronic devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Multidisciplinary Sciences
Jincheng Zhang et al.
Summary: In this study, Ga2O3 heterojunction PN diodes are demonstrated to overcome the challenges of high breakdown voltage and low doping, achieving high power figure-of-merit and showing great potential for next-generation power electronics applications.
NATURE COMMUNICATIONS
(2022)
Review
Crystallography
Nethala Manikanthababu et al.
Summary: This review investigates the effects of radiation on beta-Ga2O3 material and devices and explores its potential applications in power electronics. The study summarizes various studies on radiation-induced effects on the structure and performance of beta-Ga2O3 devices. It also highlights the importance of understanding pre-existing defects and radiation-induced defects in device performance. The results suggest that beta-Ga2O3-based devices could be suitable for space or high-radiation terrestrial applications.
Article
Engineering, Electrical & Electronic
Chao Liao et al.
Summary: This work presents the optimization of a NiO/beta-Ga2O3 heterojunction diode (HJD) by adjusting the structural parameters of the NiO layer. The influence of the NiO layer geometry and its hole concentration on the HJDs' electrical properties has been thoroughly investigated and discussed. Enlarging the NiO layer dimension or adjusting the hole concentration can improve the breakdown voltage of the device, and a double-layer structure (p(+)NiO/p(-)NiO) has been adopted to further enhance the performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
A. Lakshmanan et al.
Summary: In this study, Cu2O thin films were deposited by reactive magnetron sputtering at different substrate temperatures, and their structural, optical, and electrical properties were investigated for potential use as solar cell absorber layers. The films exhibited p-type conductivity with an optical band gap ranging from 1.82 to 2.07 eV.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Nanoscience & Nanotechnology
Hardhyan Sheoran et al.
Summary: This article reports on the fabrication of high-performance deep ultraviolet photodetectors (DUV PDs) on metal-organic chemical vapor deposition (MOCVD)-grown beta-Ga2O3 heteroepitaxy. The fabricated DUV PDs exhibit stable operation at high temperature, with an ultralow dark current and a high photo-to dark-current ratio. These DUV PDs show high detection sensitivity and potential for solar-blind detection applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Proceedings Paper
Computer Science, Hardware & Architecture
Weibing Hao et al.
Summary: This study demonstrates an effective edge termination technique for vertical NiO/β-Ga2O3 heterojunction diodes, achieving high breakdown voltage and high-temperature voltage blocking capability in diodes with uniform leakage current distribution.
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Abhishek Mishra et al.
Summary: Ga2O3, with its ultra-wide bandgap and melt-grown substrates, has the potential for low-cost high-power electronics. However, challenges such as the lack of good p-doped Ga2O3 and its low thermal conductivity need to be overcome.
6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022)
(2022)
Review
Engineering, Electrical & Electronic
Hardhyan Sheoran et al.
Summary: This study comprehensively reviews the recent development of metal-semiconductor contacts on ultrawide bandgap beta-gallium oxide (beta-Ga2O3). The study starts by introducing the basic concepts of metal-semiconductor contacts and then summarizes the current literature on ohmic and Schottky contacts on beta-Ga2O3. Finally, the status of high-power Schottky diode contact on beta-Ga2O3 is presented.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Physics, Applied
Jian-Sian Li et al.
Summary: Vertical heterojunction NiO/beta n-Ga2O/n(+) Ga2O3 rectifiers with NiO layer extension beyond the rectifying contact for edge termination show significantly improved breakdown voltages and power figure-of-merits compared to conventional rectifiers. Optimization of NiO doping and thickness design, as well as extension beyond the rectifying contact, can reduce the peak electric field at the edge of the rectifying contact.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Aakash Jadhav et al.
Summary: The barrier height inhomogeneity in beta-Ga2O3 Schottky diodes has a strong correlation with temperature, with the barrier height increasing at first and then decreasing as the temperature rises. This behavior is attributed to the bandgap narrowing of the semiconductor, resulting in close to homogeneous electrical characteristics in normal operating conditions.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2021)
Article
Energy & Fuels
Hema Lata Rao Maddi et al.
Summary: This article provides a detailed study on performance and reliability issues in SiC power MOSFETs, investigating reliability issues related to gate voltage and body diode degradation, and discussing the price roadmap and foundry models of SiC MOSFETs. The future development of mixed-mode CMOS circuits with high voltage lateral MOSFETs, offering 4-6x higher power handling capability compared to silicon circuits, is also described.
Article
Engineering, Electrical & Electronic
Hehe Gong et al.
Summary: Ga2O3 power diodes are crucial in power electronics, and NiO/Ga2O3 p-n heterojunction diodes have demonstrated better performance and stability, with high breakdown voltage and transient current capability superior to past research results.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Yaopeng Zhao et al.
Summary: This study investigates the temperature-dependent characteristics of three different materials in high electron mobility transistors (HEMTs), showing that both HfO2 and CuO experience a decrease in maximum transconductance as temperature rises. At 300 degrees C, the sub-threshold swing of CuO is smaller than that of HfO2.
Article
Physics, Applied
S. L. Benz et al.
Summary: The combination of copper oxides with gallium sesquioxide is considered an excellent heterojunction system for overcoming challenges in solar cell applications. Among the studied heterostructures, the Cu2O/α-Ga2O3 heterostructure appears to offer the most favorable band alignment for photovoltaic applications within the experimental margin of error.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Haoxun Luo et al.
Summary: In this work, a high-performance vertical NiO/beta-Ga2O3 heterojunction p-n diode was successfully fabricated, showing high breakdown voltage and low specific ON-resistance. Through optimized fabrication process, superior performance was achieved, contributing significantly to the development of power devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Review
Physics, Applied
B. R. Tak et al.
Summary: This article provides an overview of the current understanding of epitaxial growth of different phases of Ga2O3 by various growth techniques, and investigates the factors influencing the synthesis and stability of meta stable phases of Ga2O3. Additionally, a discussion on growth window is also provided using phase diagrams for aforementioned epitaxial deposition methods.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Materials Science, Coatings & Films
Xinyi Xia et al.
Summary: Research shows that using sputtered indium tin oxide (ITO) as a rectifying contact on lightly n-type beta-Ga2O3 can exhibit excellent Schottky characteristics with no thermal degradation up to 500K. The extracted barrier height at 300K and 500K, as well as the carrier transport mechanism at low temperatures, were determined through current-voltage characteristics measurements.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Review
Multidisciplinary Sciences
Yuan Yuan et al.
Summary: Gallium oxide (Ga2O3) has emerged as a highly viable semiconductor material for new researches due to its ultra-wide bandgap and rich material systems. The efficient growth of large-size and high-quality beta-Ga2O3 single crystals at a low cost has made them highly competitive compared to other wide-bandgap semiconductors. The availability of high-quality single crystals, epitaxial films, and rich material systems has led to a booming development of high-performance semiconductor devices based on Ga2O3.
FUNDAMENTAL RESEARCH
(2021)
Article
Engineering, Electrical & Electronic
Hehe Gong et al.
Summary: The performance of vertical NiO/Ga2O3 heterojunction diodes has been significantly improved by integrating SiNx/Al2O3 double-layered insulating field plate structures and additional post-annealing, resulting in decreased specific on-resistance and enhanced breakdown voltage. This improvement is attributed to the suppression of crowding electric field and reduced trap density at the interface, leading to near-unity ideality factor and high-temperature operation capability dominated by diffusion current.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Engineering, Electrical & Electronic
Xing Lu et al.
IEEE ELECTRON DEVICE LETTERS
(2020)
Article
Materials Science, Multidisciplinary
Hardhyan Sheoran et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2020)
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Hehe Gong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Physics, Applied
C. Hou et al.
APPLIED PHYSICS LETTERS
(2020)
Article
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Anmar H. Shukor et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2020)
Article
Physics, Applied
C. Hou et al.
APPLIED PHYSICS LETTERS
(2019)
Review
Physics, Multidisciplinary
Zeng Liu et al.
Article
Engineering, Electrical & Electronic
Caixia Hou et al.
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Lulu Du et al.
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Materials Science, Multidisciplinary
Peter Schlupp et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2019)
Article
Physics, Applied
Caixia Hou et al.
APPLIED PHYSICS LETTERS
(2019)
Article
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Caixia Hou et al.
IEEE ELECTRON DEVICE LETTERS
(2019)
Review
Physics, Condensed Matter
Hong Zhou et al.
JOURNAL OF SEMICONDUCTORS
(2019)
Review
Physics, Applied
H. Amano et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2018)
Review
Nanoscience & Nanotechnology
Ya-Wei Huan et al.
NANOSCALE RESEARCH LETTERS
(2018)
Review
Nanoscience & Nanotechnology
Xue HuiWen et al.
NANOSCALE RESEARCH LETTERS
(2018)
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Chaker Fares et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2018)
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Subrina Rafique et al.
OPTICAL MATERIALS EXPRESS
(2017)
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Tatsuro Watahiki et al.
APPLIED PHYSICS LETTERS
(2017)
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Takuya Maeda et al.
APPLIED PHYSICS EXPRESS
(2017)
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Manjari Garg et al.
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Gang Liu et al.
APPLIED PHYSICS REVIEWS
(2015)
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P. K. Ooi et al.
MATERIALS CHEMISTRY AND PHYSICS
(2013)
