期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 56, 期 34, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6463/acd461
关键词
CdO; heterojunction; UV photodetector; responsivity; detectivity
Se-doped CdO thin films were prepared on p-Si substrates via spin coating. Morphological, structural, and absorption measurements were performed. The CdO:Se/p-Si heterojunction exhibited good rectification feature in the dark and under different illumination conditions. It showed high responsivity and stability, indicating its potential application in photodetection.
Se-doped CdO thin films were prepared on p-Si substrates via spin coating. Morphological, structural and absorption measurements of CdO:Se film was performed. Then, a CdS:Se/p-Si heterojunction was produced by coating CdO:Se film on a p-Si substrate using spin coating method. From the I-V measurements, it has been seen that the device has a very good rectification feature in the dark, at room temperature. In order to investigate the performance of the device under light, a detailed analysis was performed by performing I-V measurements under ultraviolet (UV) light (365 and 395 nm, 10 mW cm(-2)) and different intensities of visible light (between 10 and 125 mW cm(-2)) as well as ambient light. It was observed that the CdO:Se/p-Si heterojunction performed well under both illumination conditions. The maximum responsivity and specific detectivity values were obtained as 0.72 and 4.47 A W-1 and 3.31 x 10(9) and 2.05 x 10(10) Jones for visible and UV regions, respectively. It was also seen that the device exhibited very high performance and stability even after 160 days.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据