期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 56, 期 36, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6463/acd0bc
关键词
semi-transparent perovskite solar cells; WO3; ITO; Au; ITO electrode; sputtering damage; conductivity
The effects and mechanism of sputtering damage and poor conductivity of sputtered indium tin oxide (ITO) on perovskite solar cells were investigated in this study. The deposition of tin oxide (SnO2) on non-reactive C-60 resulted in island growth of SnO2 film, leading to large dark current in solar cells. However, this phenomenon was inhibited by decorating C-60 surface with WO3 thin film. By optimizing the buffer layer and electrodes, the fill factor (FF) and power conversion efficiency (PCE) of the semi-transparent solar cells (ST-PSCs) were improved. These findings provide new strategies for damage reduction and performance improvement of ST-PSCs.
Sputtered indium tin oxide (ITO) is widely used as an electrode in semi-transparent and tandem perovskite solar cells. However, damage from sputtering to under layers and the limited conductivity of ITO are still the two main obstacles that hinder further performance improvement of the devices. In this work, the effects and mechanism of sputtering damage and poor conductivity of ITO are investigated based on a traditional perovskite solar cell with bathocuproine (BCP) buffer layer. In order to suppress the sputtering damage, tin oxide (SnO2) is deposited on C-60 to replace the BCP buffer layer. However, it is found that the deposition of SnO2 on the non-reactive C-60 by atomic layer deposition will result in island growth of SnO2 film, which is the key reason for large dark current in solar cells. Fortunately, the phenomenon is inhibited by decorating C-60 surface with WO3 thin film. In order to improve the conductivity of the transparent electrode, an ITO/Au/ITO multilayer architecture is designed. The fill factor (FF) and power conversion efficiency (PCE) of the semi-transparent solar cells (ST-PSCs) with the modified buffer layer and electrodes reached 76.4% and 17.62%, respectively, showing an improvement of FF and PCE when compared to the device with BCP buffer layer and ITO electrode. It is revealed that the optimization also increases the short circuit current of the solar cells. These results provide new strategies for damage reduction of sputtering and performance improvement of ST-PSCs.
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