Large-area vertical-geometry Pt/(010) β-Ga2O3 Schottky barrier diodes and their temperature-dependent electrical properties

Herein, vertical-geometry Pt/(010) beta-Ga2O3 Schottky barrier diodes (SBDs) with various large areas (2.25 x 10-2, 4 x 10-2 to 6.25 x 10-2 cm2) were fabricated on (010) orientation beta-Ga2O3 substrates. The electrical properties of different area diodes and the uniformity of diodes with the same area were analyzed. The rectifying ratio of all diodes was determined to be larger than 108 at the bias of +/- 2 V. The current-voltage (I-V) charac-teristics of SBD with an area of 2.25 x 10-2 cm2 were investigated in detail from 300 to 450 K. The parameters of the diodes show a strong dependence on temperature, including ideality factor (n), on-resistance (Ron), turn-on voltage (Von), and the Schottky barrier (phi b). The results indicate that a dominant inhomogeneous Schottky barrier exists at the Pt/beta-Ga2O3 interface. Such large-area devices exhibit that the value of n is close to 1 and the value of phi b was 1.09 eV at zero bias. In addition, the Von remains low and the stability remains good even after the tests at 450 K. These results indicate that we have successfully fabricated large-area SBDs with excellent performances. This work may contribute to further understanding of the performance of beta-Ga2O3 diodes in large areas and harsh environments.

Automated summary

In this study, vertical-geometry Pt/(010) beta-Ga2O3 Schottky barrier diodes (SBDs) with different large areas were fabricated and analyzed. The electrical properties of the diodes and their uniformity were investigated. The results showed that the diodes exhibited high rectifying ratio and had strong temperature dependence on various parameters.