Room-Temperature Ferromagnetism in Layered Mn-Substituted MoS2

Intrinsically two-dimensional (2D) ferromagnetic materialsnormallyexhibit a low transition temperature, above which they would losetheir magnetic properties. This makes it difficult to develop themfor practical applications. Substituting transition metal atoms into2D systems provides a straightforward way for achieving room-temperatureferromagnetism. Here, we propose a one-step chemical vapor depositionmethod to prepare Mn-substituted MoS2 monolayers, whichexhibit robust magnetism, as confirmed by a combined study of physicalproperty measurement systems and magneto-optical measurements. High-resolutiontransmission electron microscopy, Raman signals, and X-ray photoelectronspectroscopy analysis have all shown that the manganese atoms in MoS2 act as a substitute for the molybdenum sites. The microscopicorigin of magnetism in Mn-MoS2 is further revealed on thebasis of first-principles calculations, which corroborate the experimentalresults obtained. Our study demonstrates a simple route to creating2D ferroelectric materials with broad prospects in spintronic devicesand next-generation memory components.

Automated summary

A one-step chemical vapor deposition method was proposed to prepare Mn-substituted MoS2 monolayers, which exhibit robust magnetism. The microscopic origin of magnetism in Mn-MoS2 was revealed through first-principles calculations, demonstrating potential applications in spintronic devices and next-generation memory components.