Deep ultraviolet detectors based on wide bandgap semiconductors: a review

Deep ultraviolet (DUV) light is easily absorbed by the ozone layer. There is no interference from DUV light at ground and low altitude. Therefore, DUV detection has high applications in criminal investigation, the security monitoring of power grid, and forest fire alarm. Wide bandgap semiconductors are more suitable for nanodevices with high frequency and high reaction rate, which have wide bandgap, high electron saturation mobility, high thermal conductivity, and high breakdown strength. In this paper, the nanostructures, self-powered technologies, flexible substrates, electrical characteristics, and simulation optimization of wide bandgap semiconductors are thoroughly summarized with recent studies. The working principle, application, optimization, and technical difficulties of DUV detectors are also discussed.

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This paper provides a comprehensive summary of the nanostructures, self-powered technologies, flexible substrates, electrical characteristics, and simulation optimization of wide bandgap semiconductors, based on recent studies. The working principle, application, optimization, and technical difficulties of DUV detectors are also discussed.