Effect of solution-processed Mg-doped ZnO electron transport layer on the photodetector properties of MAPbI3 thin film

Solution-processed Mg-doped ZnO nanoparticles were synthesized by the precipitation method. Material formation and their crystal structure were confirmed by XRD and FTIR analysis of the materials. The optical properties of Mg-doped ZnO thin films were explored by the absorption and transmission spectra of the thin films. The band gap of the thin film increases with the increase of Mg concentration in ZnO. The electrical conductivity and the mobility of the Mg-doped thin films show a decreasing trend with the increase of Mg concentration in ZnO. The Mg-doped ZnO thin films were used as an electron transport layer in MAPbI(3) perovskite photodetectors. The photodetectors show substantial responsivity in the wavelength range of 300 to 800 nm. The highest responsivity was observed in the UV and blue regions of light. The MAPbI(3) photodetectors with the electron transport layer of Mg-doped ZnO thin films show responsivity more than 15 times in comparison to only ZnO thin film. Our studies demonstrate that the Mg-doped ZnO thin films form good energy levels alignments and interfaces for perovskite photoactive materials.

Automated summary

Solution-processed Mg-doped ZnO nanoparticles were synthesized and characterized. The optical properties of Mg-doped ZnO thin films were investigated, showing an increase in band gap and a decrease in conductivity with Mg concentration. The use of Mg-doped ZnO thin films as electron transport layer in perovskite photodetectors resulted in significantly improved responsivity compared to ZnO thin film.