Optoelectrical properties extraction using spectroscopic ellipsometry, in case of AZO thin films deposited by DC reactive sputtering in various oxygen concentration

In this article, we have achieved an unprecedented contactless method for extracting the optoelectrical properties of thin films using the spectroscopic ellipsometry technique. Indeed, this semi-experimental method was made by extracting the empirical relations (linear and polynomial) from the results of the extremal values of psi ellipsometric angle spectrum in terms of the optoelectrical properties (charge carrier density, resistivity, mobility, and bandgap energy) of AZO thin films. The latter have been deposited on oxidized silicon substrates by direct current reactive magnetron sputtering at room temperature at various oxygen concentrations. A relationship was also reached in function of psi that allows the estimation of oxygen concentration inside the depositing chamber. The accuracy of the equations was evaluated to obtain correct predictions for the effectiveness of this contactless.

Automated summary

In this article, an unprecedented contactless method based on spectroscopic ellipsometry technique was developed to extract the optoelectrical properties of thin films. The empirical relations (linear and polynomial) were extracted from the extremal values of the psi ellipsometric angle spectrum to determine the optoelectrical properties of AZO thin films. Furthermore, a relationship related to psi was established to estimate the oxygen concentration inside the depositing chamber. The accuracy of the equations was evaluated to ensure correct predictions for the effectiveness of this contactless method.