期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 34, 期 17, 页码 -出版社
SPRINGER
DOI: 10.1007/s10854-023-10800-4
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PbZr0.2Ti0.8O3/La2Zr2O7 (PZT/LZO) bilayer and amorphous La2Zr2O7 thin films were fabricated and showed a typical and robust bipolar resistive switching (RS) behavior at room temperature. The PZT/LZO bilayer exhibited a better RS property compared to the LZO single film, with a higher HRS/LRS ratio. The PZT/LZO structure also showed a stable degradation RS performance until 10(3) cycles at room temperature, and the conduction mechanisms in both PZT/LZO bilayer and LZO single film were identified.
PbZr0.2Ti0.8O3/La2Zr2O7 (PZT/LZO) bilayer and amorphous La2Zr2O7 thin films were fabricated using pulse laser deposition and radio frequency magnetron sputtering. A typical and robust bipolar resistive switching (RS) behavior was revealed in the PZT/LZO heterostructure at room temperature. Compared with LZO single film, the PZT/LZO heterostructure exhibits a better RS property with a one order magnitude higher HRS/LRS ratio. More interestingly, the RS of PZT/LZO structure exhibited a stable degradation RS performance until 10(3) cycles at room temperature. The conduction mechanism in PZT/LZO bilayer can be attributed to the space-limited-conduction (SCLC) and Schottky-barrier models, while LZO thin film was attributed to SCLC conduction. As a result, the PZT/LZO bilayer under polarization field tuning shows an effective way to improve the RS performance and provides a new route for RRAM applications.
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