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Effect of Pb doping onto physical properties of ZnO thin films deposited by AACVD

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This study investigated the impact of lead concentration (0-1 wt%) on the physical properties and photo-detection properties of zinc oxide thin films. All films were deposited using Aerosol Assisted Chemical Vapor Deposition (AACVD) techniques and characterized through various methods. X-ray diffraction analysis revealed the formation of single-phase hexagonal ZnO thin films with preferred orientation changes at a Pb concentration of 0.5wt%. The formation of nano-rods was observed in films prepared with 0.5 and 1wt% lead. The band gap values increased with increased Pb doping. The deposited films exhibited high sensitivity to UV light after long exposure.
In the present work, we studied the effect of Lead-concentration (0-1 wt%) on the physical properties of zinc oxide thin films and its photo-detection properties. All films were deposited using Aerosol Assisted Chemical Vapor Deposition (AACVD) techniques with the same deposition parameters but at different Pb concentration changes. Films were characterized using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive x-ray spectroscopy (EDX) and optical spectroscopy. XRD revealed the formation of single-phase hexagonal ZnO thin films with preferred orientation changes from (002) to (100) at Pb concentration of 0.5wt% film. The crystallite size in deposited films is between 14 and 16 nm. The formation of nano-rods was also recorded in the films prepared with 0.5 and 1wt% lead. The band gap values have been estimated and increased with increased Pb doping. The response of the deposited films against UV light (365 nm, 6 micro-watt) is recorded with very high sensitivity at long times of exposure.

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