Magneto electric sensor based on cantilever coated galfenol/ AlN structure

Ultrasensitive magnetic field sensors based on magnetoelectric (ME) structures have many applications in bio-magnetic sensors and magnetoencephalography (MEG) scanners. Enhance the sensitivity, limit of detection and main frequency of these sensors need simulation process by accurate methods such as finite element method (FEM). To get good sensitivity and efficient benefit, we use a cantilever-type composite structures including galfenol alloy as a magnetostrictive layer and AlN as a piezoelectric layer. Galfenol is an alloy of iron and gallium and its Fe0.83Ga0.17 structure has a high magnetostriction coefficient and can be used as a thin film. This simulated sensor can measure an AC magnetic field with field resolution in the order of 1 pT. This sensor has the best performance in the bias DC magnetic field of 2.3 mT and resonance frequency of 2521.8 Hz and has a magnetoelectric coefficient of 4865 (V/cm.Oe).

Automated summary

Ultrasensitive magnetic field sensors based on magnetoelectric (ME) structures can be used in various applications such as bio-magnetic sensors and magnetoencephalography (MEG) scanners. To achieve enhanced sensitivity, detection limit, and main frequency, accurate simulation methods like finite element method (FEM) are employed. A cantilever-type composite structure composed of galfenol alloy as a magnetostrictive layer and AlN as a piezoelectric layer is used to obtain optimal sensitivity and efficiency. The simulated sensor can measure AC magnetic field with a field resolution of 1 pT, while performing best at a bias DC magnetic field of 2.3 mT and resonance frequency of 2521.8 Hz, with a magnetoelectric coefficient of 4865 (V/cm.Oe).