N-Polar growth of nitride semiconductors with MOVPE and its applications

All white LEDs that largely contribute to the energy saving as well as high electron mobility transistors (HEMTs) powering the base stations of cellular phone networks are made from only Ga-polar materials epitaxially grown along the c-axis. N-polar material, which has the opposite crystal-direction, is considered having high potential for expanding the application field. In this paper, the present status of N-polar epitaxial growth in our lab. is reviewed. Especially, the growth mechanism of N-polar GaN on the widely used sapphire substrate is investigated in detail by using transmission electron microscopy. Finally, as device applications, solar cells, red LEDs, and inverted HEMT are described.

Automated summary

This paper reviews the current status of N-polar epitaxial growth in our lab, focusing on the growth mechanism of N-polar GaN on sapphire substrate using transmission electron microscopy. Furthermore, it describes the potential device applications including solar cells, red LEDs, and inverted HEMT.