☆ 4.4 Article

Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

JOURNAL OF CRYSTAL GROWTH (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Review Energy & Fuels

Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling-A Review

Enrico Bottaro et al.

Summary: This study discusses the similarities and differences between MOSFETs and GaN HEMTs at the datasheet level and highlights the specific features of MOSFET circuit models that can be used for GaN HEMT modeling. The research reveals that some models can be adapted for simulating the static characteristics of GaN HEMT devices, while MOSFET models for dynamic characteristics can also be used for GaN HEMTs.

ENERGIES (2022)

添加到收藏夹

Article Chemistry, Physical

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers

Alice Hospodkova et al.

Summary: A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions were investigated using variable energy positron annihilation spectroscopy to find a link between technological conditions, GaN layer properties, and the concentration of gallium vacancies (V-Ga). Different correlations between technological parameters and V-Ga concentration were observed for layers grown from different gallium precursors.

MATERIALS (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer

Stefan Moench et al.

Summary: Experimental comparison between a high-voltage AlN/GaN superlattice (SL) buffer and a step-graded AlGaN/GaN buffer for monolithic AlGaN/GaN power circuits showed that the SL buffer performs better in mitigating negative back gating effects and leakage at positive substrate voltage, making it more suitable for high-voltage power topology operation. Additionally, HEMTs on the SL buffer exhibited minimal threshold voltage shift at negative substrate bias, allowing for efficient operation of monolithic high-voltage power topologies.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2021)

添加到收藏夹

Review Nanoscience & Nanotechnology

Recent Advances in GaN-Based Power HEMT Devices

Jiaqi He et al.

Summary: This review discusses various effective approaches to enhance the performance of GaN-based power HEMTs, such as modified epistructures, recess-free processes, dielectric effects on MIS structure, metal/semiconductor contact engineering, and field plate effects.

ADVANCED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Frantisek Hajek et al.

Summary: This study investigates the influence of dislocation density on the transport properties of HEMT structures, demonstrating that reducing the dislocation density can significantly enhance electron mobility in 2DEG and improve the performance of high-frequency GaN HEMT applications.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

Shuang Liu et al.

Summary: A high-electron-mobility transistor (HEMT) with AlN/GaN superlattice (SL) channel has been successfully demonstrated on a silicon substrate, achieving high performance with optimized breakdown voltage and output current. The trap states in the AlN/GaN SL channel were investigated, revealing a reduction in trap state density in the parasitic channel and specific energy levels in the main channel. This study represents a significant advancement in the development of SL channel HEMTs on cost-effective silicon substrates and provides a novel technology for high output current in AlGaN multichannel devices.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Crystallography

Improvement of luminescence properties of n-GaN using TEGa precursor

T. Hubacek et al.

JOURNAL OF CRYSTAL GROWTH (2020)

添加到收藏夹

Article Crystallography

Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures

T. Hubacek et al.

JOURNAL OF CRYSTAL GROWTH (2017)

添加到收藏夹

Review Physics, Condensed Matter

A survey of Gallium Nitride HEMT for RF and high power applications

A. S. Augustine Fletcher et al.

SUPERLATTICES AND MICROSTRUCTURES (2017)

添加到收藏夹

Article Engineering, Electrical & Electronic

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Olle Axelsson et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)

添加到收藏夹

Article Crystallography

Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

Piero Gamarra et al.

JOURNAL OF CRYSTAL GROWTH (2015)

添加到收藏夹

Review Materials Science, Multidisciplinary

Deep traps in GaN-based structures as affecting the performance of GaN devices

Alexander Y. Polyakov et al.

MATERIALS SCIENCE & ENGINEERING R-REPORTS (2015)

添加到收藏夹

Article Engineering, Electrical & Electronic

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Michael J. Uren et al.

IEEE ELECTRON DEVICE LETTERS (2014)

添加到收藏夹

Article Engineering, Electrical & Electronic

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Matteo Meneghini et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)

添加到收藏夹

Article Materials Science, Multidisciplinary

Challenges for energy efficient wide band gap semiconductor power devices

Fabrizio Roccaforte et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)

添加到收藏夹

Article Engineering, Electrical & Electronic

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

Michael J. Uren et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)

添加到收藏夹

Article Engineering, Electrical & Electronic

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Dong Seup Lee et al.

IEEE ELECTRON DEVICE LETTERS (2011)

添加到收藏夹

Article Physics, Applied

The surface potential of GaN:Si

K. Koehler et al.

JOURNAL OF APPLIED PHYSICS (2008)

添加到收藏夹

Article Engineering, Electrical & Electronic

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

T Palacios et al.

IEEE ELECTRON DEVICE LETTERS (2006)

添加到收藏夹

Article Crystallography

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

DD Koleske et al.

JOURNAL OF CRYSTAL GROWTH (2002)

添加到收藏夹

Article Crystallography

Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium

KM Song et al.

JOURNAL OF CRYSTAL GROWTH (2001)

添加到收藏夹

Article Physics, Applied

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

JP Ibbetson et al.

APPLIED PHYSICS LETTERS (2000)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.