Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

Although a lot of attention was devoted to different aspects of GaN high electron mobility transistor (HEMT) structure such as buffer layer architecture, AlGaN barrier, surface passivation and dielectric choice, not much attention was paid to optimize the technology of GaN channel. We show in this work that by optimizing the channel technology the electron mobility can be significantly improved. We have studied the influence of technological parameters on transport properties on the series of GaN layers resembling a HEMT channel. We pay most attention to the layer growth using TEG precursor. The examined parameters were type of reactor atmosphere, growth temperature, growth rate influenced by precursor concentration and reactor pressure. Using optimized parameters for growth of a HEMT structure, we have succeeded in increasing the electron mobility in 2DEG by 30 %.

Automated summary

Although various aspects of GaN high electron mobility transistor (HEMT) structure have been extensively studied, such as buffer layer architecture, AlGaN barrier, surface passivation, and dielectric choice, little attention has been given to optimize the GaN channel technology. In this work, we demonstrate that by optimizing the channel technology, electron mobility can be significantly improved. We investigated the influence of technological parameters on the transport properties of a series of GaN layers mimicking a HEMT channel. We focused on the layer growth using TEG precursor and examined parameters such as reactor atmosphere, growth temperature, growth rate influenced by precursor concentration, and reactor pressure. By using optimized growth parameters for the HEMT structure, we successfully increased the electron mobility in 2DEG by 30%.