期刊
Journal of the Society for Information Display
卷 24, 期 11, 页码 669-675出版社
WILEY-BLACKWELL
DOI: 10.1002/jsid.516
关键词
GaN; microdisplay; brightness; augmented reality; LED; color; manufacturing
类别
资金
- French National Research Agency (ANR)
High-brightness GaN-based emissive microdisplays can be fabricated with different approaches that are listed and described. They consist either of hybridizing a GaN LED array on a CMOS circuit or building a monolithic component on a single substrate. Using the hybridization approach, two types of 10-mu m pixel pitch GaN microdisplay prototypes were developed: (1) directly driven, 300 x 252 pixels and (2) active-matrix, 873 x 500 pixels. Brightness as high as 1 x 10(6) and 1 x 10(7) cd/m(2) for blue and green arrays, respectively, were reached. GaN-based emissive microdisplays are suitable for augmented reality systems or head-up displays, but some challenges remain before they can be put in production.
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