Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor

Developing p-type oxide thin-film transistors (TFTs) is an essential path for further application in complementary metal oxide semiconductor (CMOS) components. However, the inferior electrical performance of p-type MO TFTs compared to n-type TFTs remains an ongoing challenge. Herein, for the first time, a low temperature, facile material engineering approach by incorporating n-type nanoparticles (NPs) was proposed for preparing p-type transparent NiOx TFTs. The characteristics of thin films blending NPs and the electrical performances of TFTs were investigated. The field effect mobility of TFTs with doping was nearly 20 times higher than pristine TFTs without doping, which was mainly beneficial from the suitable band alignment between NPs and p-type oxide, the increasing Ni3+ oxidation state in NiOx, as well as the improved dielectric/semiconductor interface quality. Electrons from drain electrode injected into metal oxide turn accepted in NPs rather than being trapped in the dielectric/semiconductor interface due to a strong surface electron depletion effect of NPs. NPs with small particle size and appropriate concentration would promote continuous hole transport by electrons transferring and reducing the interface trap state. The facile material engineering strategy is a promising technique for preparing p-type transparent MO-TFTs at low temperature, which showed great potential to be applicable in CMOS circuits on flexible substrates.

Automated summary

Developing p-type oxide thin-film transistors (TFTs) is crucial for their application in CMOS components. However, their inferior performance compared to n-type TFTs remains a challenge. This study proposes a low temperature material engineering approach using n-type nanoparticles (NPs) to prepare p-type transparent NiOx TFTs. The addition of NPs significantly improves the electrical performance of the TFTs by enhancing the band alignment, increasing oxidation state, and improving the interface quality. This facile material engineering strategy shows great potential for preparing p-type transparent MO-TFTs for CMOS circuits on flexible substrates.