4.7 Article

Two-dimensional hole gas formation at the kappa-Ga2O3/AlN heterojunction interface

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Nanoscience & Nanotechnology

Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates

A. Y. Polyakov et al.

Summary: Thick films (23 μm) of kappa-Ga2O3 were successfully grown on GaN/sapphire templates using Halide Vapor Phase Epitaxy (HVPE). The films exhibited good crystalline quality and surface morphology. They possessed specific properties such as a wide absorption band and deep-level traps.

APL MATERIALS (2022)

Article Chemistry, Physical

Investigation of p-type doping in β- and κ-Ga2O3

Charles J. Zeman et al.

Summary: This study systematically investigated the effects of vacancies and silicon substitutions on the electronic structure of Ga2O3, and found that silicon can act as an amphoteric dopant for p-type behavior under certain conditions.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

Article Physics, Applied

Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics

Kentaro Kaneko et al.

Summary: Ultra-wide bandgap p-type alpha-(Ir,Ga)(2)O-3 films were achieved through unintentional or Mg doping, showing potential for high-quality pn heterojunction formation with n-type alpha-Ga2O3 due to their similar crystal structures and good lattice matching. Initial testing of a pn junction diode composed of these materials demonstrated promising performance.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates

Alexander Y. Polyakov et al.

Summary: Ga2O3 films grown with AlN/AlGaN exhibited a highly conducting e-phase, while films grown with Al2O3 were mainly composed of (-201) beta-Ga2O3. The electrical properties of the heterojunctions were largely influenced by the properties of the Ga2O3 films, showing measurable photosensitivity for 259 nm wavelength excitation.

JOURNAL OF APPLIED PHYSICS (2021)

Article Materials Science, Multidisciplinary

In situ TEM study of κ → β and κ → γ phase transformations in Ga2O3

I. Cora et al.

ACTA MATERIALIA (2020)

Article Materials Science, Multidisciplinary

HVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates

V. Nikolaev et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Article Materials Science, Multidisciplinary

Editors' Choice-Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy

A. Y. Polyakov et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Article Nanoscience & Nanotechnology

Si and Sn dopirig of ε-Ga2O3 layers

A. Parisini et al.

APL MATERIALS (2019)

Article Nanoscience & Nanotechnology

Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

A. Y. Polyakov et al.

APL MATERIALS (2019)

Article Physics, Applied

Materials issues and devices of α- and β-Ga2O3

Elaheh Ahmadi et al.

JOURNAL OF APPLIED PHYSICS (2019)

Review Materials Science, Multidisciplinary

Gallium oxide solar-blind ultraviolet photodetectors: a review

Jingjing Xu et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Article Physics, Applied

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

S. J. Pearton et al.

JOURNAL OF APPLIED PHYSICS (2018)

Review Nanoscience & Nanotechnology

Group-III Sesquioxides: Growth, Physical Properties and Devices

Holger von Wenckstern

ADVANCED ELECTRONIC MATERIALS (2017)

Article Materials Science, Multidisciplinary

Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology

Daoyou Guo et al.

OPTICAL MATERIALS EXPRESS (2014)