A high-performance broadband self-powered photodetector employing an MoS2/LaVO3 heterojunction structure

The combination of a high absorption LaVO3 in the visible region and two-dimensional semiconductor material is an ideal structure for high-performance broadband photodetector (PD) applications. We report MoS2/LaVO3 heterojunction PDs. The p-n junctions were found to show good PD properties, including a photocurrent/dark current ratio of 104 at zero voltage, indicating self-powered. The PDs exhibit a re-sponsivity (R) of 0.14 AW-1 and a detectivity of 4.5 x 109 cm Hz1/2 W-1 at 650 nm. The linear dynamic range and response/recovery times of the PDs are 83 dB and 260/410 mu s, respectively. Notably, the response time of the PDs is faster than those of previously reported chemical vapor deposition MoS2-based hetero-structured PDs. Furthermore, the loss of the R is only 16% of its initial value, whereas the PDs are kept for 2000 h in the air. Additionally, the R loss of the PD decreases by only 16% of its original value during 2000 h under air at 25 degrees C temperature and 30% humidity. These results demonstrate the potential of MoS2/LaVO3 heterojunctions as self-powered optoelectronic devices.(c) 2022 Elsevier B.V. All rights reserved.

Automated summary

The combination of high absorption LaVO3 and two-dimensional semiconductor material is ideal for high-performance broadband photodetector applications. MoS2/LaVO3 heterojunction photodetectors exhibit good properties, including a high photocurrent/dark current ratio, a high responsivity, and a fast response time. The loss of the responsivity is minimal after extended exposure to air, demonstrating the potential of MoS2/LaVO3 heterojunctions as self-powered optoelectronic devices.