期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 939, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2023.168784
关键词
Porous GaN; Wet etching; Photoelectrochemical sensing; Glucose detection
A novel photoelectrochemical glucose sensor was developed using a three-dimensional porous GaN photoanode. Glucose was photooxidized by the GaN photoanode, resulting in increased photocurrents. The sensor exhibited good reproducibility, selectivity, and stability, and was capable of detecting glucose in human serum samples.
A novel photoelectrochemical glucose sensor was constructed based on three-dimensional (3D) porous GaN photoanode fabricated via wet etching of as-grown GaN epitaxial wafer. The increased photocurrents in-dicated glucose can be photooxidized by 3D porous GaN in both neutral and alkaline electrolytes. In neutral electrolyte, the detection range and sensitivity were 100 mu M to 3.6 mM and 40.14 mu A mM-1 cm-2, respec-tively. In alkaline electrolyte, the detection range was 1 mu M to 6.66 mM, and the sensitivities were 631.9 mu A mM-1 cm-2 in the range of 1-161 mu M and 60.03 mu A mM-1 cm-2 in the range of 161 mu M to 6.66 mM. Moreover, 3D porous GaN exhibited favorable reproducibility, good selectivity and satisfied stability toward glucose detection. In addition, this sensor can detect glucose in human serum samples, demonstrating the good practicability of 3D porous GaN.(c) 2023 Elsevier B.V. All rights reserved.
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