☆ 4.3 Review

Spintronics memory using magnetic tunnel junction for X nm-generation

JAPANESE JOURNAL OF APPLIED PHYSICS (2023)

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Review Physics, Applied

Comparing h-BN and MgO tunnel barriers for scaled magnetic tunnel junctions

J. Robertson et al.

Summary: Magnetic tunnel junctions with MgO/Fe interfaces and perpendicular spin directions are widely used in spin-transfer torque magnetic random-access memories. The future scaling of MTJs may affect materials choices, including comparing 2D h-BN materials with existing MgO tunnel barriers. The effects of different h-BN interfacial sites on Ni or Co are compared in terms of their magnetoresistance, magnetic isotropy, and the pillow effect, balanced against the favorable chemical thermodynamics of the existing MgO barriers and MgO/Fe interfaces.

JAPANESE JOURNAL OF APPLIED PHYSICS (2023)

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Article Computer Science, Hardware & Architecture

Microarchitectural Exploration of STT-MRAM Last-level Cache Parameters for Energy-efficient Devices

Tommaso Marinelli et al.

Summary: As technology advances, limitations of traditional memories become more evident. Spin-transfer torque magnetic RAM (STT-MRAM) is considered as a promising alternative with advantages such as small cell design, absence of static current, and non-volatility. However, it also has limitations in terms of higher latencies and dynamic energy consumption for write operations. This work explores various microarchitectural parameters to overcome these limitations and shows that tuning these parameters effectively can improve performance while saving energy in embedded devices.

ACM TRANSACTIONS ON EMBEDDED COMPUTING SYSTEMS (2022)

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Article Chemistry, Multidisciplinary

Unveiling a Chemisorbed Crystallographically Heterogeneous Graphene/L10-FePd Interface with a Robust and Perpendicular Orbital Moment

Hiroshi Naganuma et al.

Summary: A crystallographically heterogeneous interface was fabricated by growing hexagonal graphene (Gr) on a tetragonal FePd epitaxial film. The interface exhibited a short interatomic distance and an interface perpendicular magnetic anisotropy (IPMA) through chemisorption-type van der Waals force and enhanced orbital magnetic moment. This interface structure has potential applications in high-density magnetic random-access memory (MRAM).

ACS NANO (2022)

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Article Nanoscience & Nanotechnology

Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation

Hiroshi Naganuma et al.

Summary: The influence of sidewall damage on the thermal stability factor of quad-interface magnetic tunnel junctions is investigated through micromagnetic simulation. Sidewall damage causes a split in the energy barrier, resulting in decreased thermal stability.

AIP ADVANCES (2022)

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Article Chemistry, Multidisciplinary

Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctions

Victor Zatko et al.

Summary: This study reports on the significant spin-filtering effects in epitaxial graphene-based spin valves, particularly enhanced in the case of multilayer graphene. The combination of chemical vapor deposited multilayer graphene with high-quality epitaxial Ni(111) ferromagnetic spin source led to the obtained results. Complete nanometric spin valve junctions were fabricated using a local probe indentation process, and spin properties were extracted from the graphene-protected ferromagnetic electrode using a reference Al2O3/Co spin analyzer. The study discusses the emerging physical picture of graphene-ferromagnet systems and provides insight into the efficient spin filtering effects and the interfacial matching of the graphene layers with the spin-polarized Ni surface, showcasing the potential of low Resistance-Area (RA) graphene interfaces in spin-based devices.

ACS NANO (2022)

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Article Physics, Applied

Density functional study of twisted graphene L10-FePd heterogeneous interface

Mitsuharu Uemoto et al.

Summary: In this study, density functional theory was used to investigate the atomic-scale configurations, electronic and magnetic properties, and adsorption mechanism of graphene on L1(0)-FePd(001). Various atomic-scale models were proposed and the energetical stability was analyzed. The study provides insights into the physical properties of the L1(0)-FePd(001) interface and facilitates the construction of low-cost computational models.

JOURNAL OF APPLIED PHYSICS (2022)

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Article Physics, Applied

Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions

Butsurin Jinnai et al.

Summary: The study shows that in shape-anisotropy magnetic tunnel junctions, magnetization reversal proceeds coherently in the 15-nm-thick CoFeB layer, which is different from conventional interfacial-anisotropy MTJs. Evaluation of the thermal stability factor Delta using two methods is crucial for the development of ultra-small and high-reliability MTJ devices.

APPLIED PHYSICS LETTERS (2021)

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Article Multidisciplinary Sciences

Ultralow contact resistance between semimetal and monolayer semiconductors

Pin-Chun Shen et al.

Summary: The article discusses achieving ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides, suppressing metal-induced gap states and significantly reducing contact resistance. Experimental results demonstrate zero Schottky barrier height and high on-state current density on multilayer MoS2.

NATURE (2021)

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Article Multidisciplinary Sciences

First-principles study of electronic structure and magnetic properties of L10-ordered FeNi, FePd, and FePt alloys

K. Aledealat et al.

Summary: The structural, electronic, and magnetic properties of L10-ordered FeM alloys (M = Ni, Pd, or Pt) were studied using first-principles method, revealing that the PBE approximation has the most accurate results for lattice parameters and that the most stable spin configuration is ferromagnetic. FePd and FePt alloys can transition from ferromagnetic to antiferromagnetic state by varying the tetragonality ratio, leading to the observation of a pseudogap. Large magnetocrystalline anisotropies were found in FePt alloy, while FePd and FeNi showed relatively lower values. Additionally, Heisenberg exchange interactions were calculated from first-principles and Green's functions formalism.

HELIYON (2021)

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Article Engineering, Electrical & Electronic

First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

K. Nishioka et al.

Summary: The developed 25-nm quad-MTJ technology has better thermal stability and performance advantages compared to double-MTJ, with higher write efficiency and endurance.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Review Physics, Applied

Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe,Co magnetic tunnel junctions

H. Lu et al.

Summary: Magnetic tunnel junctions with MgO/Fe interfaces and out-of-plane spin direction are the basis of present-day STT-MRAM devices, offering long endurance and reliability. As MTJ dimensions scale in the future, changes in materials choice, such as replacing MgO with 2D materials like h-BN, may impact device performance. The comparison of band structures and bonding sites of different tunnel barriers can affect their spin polarization and transmission magneto-resistance (TMR), with potential implications on overall TMR and scaling progress.

APPLIED PHYSICS REVIEWS (2021)

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Article Nanoscience & Nanotechnology

Large Perpendicular Magnetic Anisotropy in Nanometer-Thick Epitaxial Graphene/Co/Heavy Metal Heterostructures for Spin-Orbitronics Devices

Maria Blanco-Rey et al.

Summary: The research indicates that nanometer-thick epitaxial Co films intercalated between graphene and a heavy metal substrate exhibit large perpendicular magnetic anisotropy, with stable magnetic behavior achieved through the optimization of structural defects.

ACS APPLIED NANO MATERIALS (2021)

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Article Physics, Applied

A perpendicular graphene/ferromagnet electrode for spintronics

H. Naganuma et al.

APPLIED PHYSICS LETTERS (2020)

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Article Nanoscience & Nanotechnology

Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions

Hiroshi Naganuma et al.

AIP ADVANCES (2020)

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Article Engineering, Electrical & Electronic

Flux-Mediated Doping of Bi into (La,Sr)MnO3 Films Grown on NdGdO3 (110) Substrates

Koji Mizufune et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

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Article Multidisciplinary Sciences

Spin filtering by proximity effects at hybridized interfaces in spin-valves with 2D graphene barriers

Maelis Piquemal-Banci et al.

NATURE COMMUNICATIONS (2020)

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Article Engineering, Electrical & Electronic

Perpendicular Magnetized Magnetic Random-Access Memory Cells Utilizing the Precessional Spin-Current Structure: Benefits for Modern Memory Applications

Georg Wolf et al.

IEEE MAGNETICS LETTERS (2020)

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Article Materials Science, Multidisciplinary

Giant enhancement of perpendicular magnetic anisotropy and induced quantum anomalous Hall effect in graphene/NiI2 heterostructures via tuning the van der Waals interlayer distance

Qirui Cui et al.

PHYSICAL REVIEW B (2020)

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Article Chemistry, Physical

Double-well potential energy surface in the interaction between h-BN and Ni(111)

Jorge Ontaneda et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2019)

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Article Nanoscience & Nanotechnology

L10 FePt Films with Optimal (001) Texture on Amorphous SiO2xd/Si Substrates for High-Density Perpendicular Magnetic Recording Media

Jin-Yan Chiou et al.

ACS APPLIED NANO MATERIALS (2019)

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Article Physics, Applied

Interface-induced perpendicular magnetic anisotropy of Co nanoparticles on single-layer h-BN/Pt(111)

Takahiro Watanabe et al.

APPLIED PHYSICS LETTERS (2018)

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Article Multidisciplinary Sciences

Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions

K. Watanabe et al.

NATURE COMMUNICATIONS (2018)

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Review Materials Science, Multidisciplinary

Spintronics based random access memory: a review

Sabpreet Bhatti et al.

MATERIALS TODAY (2017)

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Article Instruments & Instrumentation

Nanometer-resolution depth-resolved measurement of florescence-yield soft x-ray absorption spectroscopy for FeCo thin film

M. Sakamaki et al.

REVIEW OF SCIENTIFIC INSTRUMENTS (2017)

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Article Engineering, Electrical & Electronic

Theory of Spin Torque Switching Current for the Double Magnetic Tunnel Junction

Daniel C. Worledge

IEEE MAGNETICS LETTERS (2017)

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Article Multidisciplinary Sciences

Highly Enhanced TMR Ratio and Δ for Double MgO-based p-MTJ Spin-Valves with Top Co2Fe6B2 Free Layer by Nanoscale-thick Iron Diffusion-barrier

Seung-Eun Lee et al.

SCIENTIFIC REPORTS (2017)

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Review Nanoscience & Nanotechnology

Band gap opening in graphene: a short theoretical study

Sivabrata Sahu et al.

INTERNATIONAL NANO LETTERS (2017)

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Article Physics, Applied

Ultra-low magnetic damping of perovskite La0.7Sr0.3MnO3 thin films

Qing Qin et al.

APPLIED PHYSICS LETTERS (2017)

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Article Physics, Applied

Perpendicular magnetic tunnel junction with enhanced anisotropy obtained by utilizing an Ir/Co interface

Kay Yakushiji et al.

APPLIED PHYSICS EXPRESS (2016)

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Article Chemistry, Multidisciplinary

Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt-Graphene Heterostructures

Hongxin Yang et al.

NANO LETTERS (2016)

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Article Physics, Applied

Protecting nickel with graphene spin-filtering membranes: A single layer is enough

M. -B. Martin et al.

APPLIED PHYSICS LETTERS (2015)

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Article Physics, Applied

Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

Luc Thomas et al.

APPLIED PHYSICS LETTERS (2015)

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Article Chemistry, Multidisciplinary

Electrical Detection of Millimeter-Waves by Magnetic Tunnel Junctions Using Perpendicular Magnetized L1(0)-FePd Free Layer

Hiroshi Naganuma et al.

NANO LETTERS (2015)

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Article Physics, Multidisciplinary

Mechanism of Uniaxial Magnetocrystalline Anisotropy in Transition Metal Alloys

Yohei Kota et al.

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2014)

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Article Materials Science, Multidisciplinary

Magnetic tunnel junctions with single-layer-graphene tunnel barriers

Wan Li et al.

PHYSICAL REVIEW B (2014)

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Article Materials Science, Multidisciplinary

Out-of-plane magnetoresistance in ferromagnet/graphene/ferromagnet spin-valve junctions

Jae-Hyun Park et al.

PHYSICAL REVIEW B (2014)

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Article Engineering, Electrical & Electronic

MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis

Hideo Sato et al.

IEEE TRANSACTIONS ON MAGNETICS (2013)

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Article Chemistry, Multidisciplinary

Vertical graphene spin valve with Ohmic contacts

Jie Meng et al.

NANOSCALE (2013)

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Article Chemistry, Multidisciplinary

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

Bruno Dlubak et al.

ACS NANO (2012)

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Article Physics, Applied

Perpendicular magnetic anisotropy of cobalt films intercalated under graphene

N. Rougemaille et al.

APPLIED PHYSICS LETTERS (2012)

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Article Computer Science, Hardware & Architecture

NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory

Xiangyu Dong et al.

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (2012)

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Article Materials Science, Multidisciplinary

L10 FePt thin films with [001] crystalline growth fabricated by SiO2 addition-rapid thermal annealing and dot patterning of the films

S. Ishio et al.

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2012)

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Article Chemistry, Multidisciplinary

Graphene As a Tunnel Barrier: Graphene-Based Magnetic Tunnel Junctions

Enrique Cobas et al.

NANO LETTERS (2012)

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Article Engineering, Electrical & Electronic

Metal-Oxide RRAM

H. -S. Philip Wong et al.

PROCEEDINGS OF THE IEEE (2012)

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Article Physics, Applied

Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions

H. Sato et al.

APPLIED PHYSICS LETTERS (2011)

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Article Physics, Applied

Structure and magnetic properties of L10-FePt thin films on TiN/RuAl underlayers

En Yang et al.

JOURNAL OF APPLIED PHYSICS (2011)

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Article Physics, Applied

High coercive FePt and FePt-SiNx(001) films with small grain size and narrow opening-up of in-plane hysteresis loop by TiN intermediate layer

H. H. Li et al.

JOURNAL OF APPLIED PHYSICS (2011)

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Article Chemistry, Physical

A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

S. Ikeda et al.

NATURE MATERIALS (2010)

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Review Nanoscience & Nanotechnology

Graphene transistors

Frank Schwierz

NATURE NANOTECHNOLOGY (2010)

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Article Materials Science, Multidisciplinary

First-principles study of the interaction and charge transfer between graphene and metals

P. A. Khomyakov et al.

PHYSICAL REVIEW B (2009)

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Article Physics, Applied

Structure-magnetic property correlations in the epitaxial FePt system

G. R. Trichy et al.

APPLIED PHYSICS LETTERS (2008)

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Article Engineering, Electrical & Electronic

Graphene in Multilayered CPP Spin Valves

Tariq M. G. Mohiuddin et al.

IEEE TRANSACTIONS ON MAGNETICS (2008)

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Review Materials Science, Multidisciplinary

Spin transfer torques

D. C. Ralph et al.

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2008)

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Article Materials Science, Multidisciplinary

Temperature dependence of the exchange stiffness in FePd(001) thin films:: Deviation from the empirical law A(T)∝MS2 at intermediate temperatures

M. Mulazzi et al.

PHYSICAL REVIEW B (2008)

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Review Chemistry, Physical

Nanoionics-based resistive switching memories

RaineR Waser et al.

NATURE MATERIALS (2007)

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Article Physics, Multidisciplinary

Graphite and graphene as perfect spin filters

V. M. Karpan et al.

PHYSICAL REVIEW LETTERS (2007)

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Article Physics, Applied

L10 ordered epitaxial FePt (001) thin films on TiN/Si (100) by pulsed laser deposition

G. R. Trichy et al.

APPLIED PHYSICS LETTERS (2006)

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Article Chemistry, Physical

String method in collective variables: Minimum free energy paths and isocommittor surfaces

Luca Maragliano et al.

JOURNAL OF CHEMICAL PHYSICS (2006)

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Article Chemistry, Physical

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

S Yuasa et al.

NATURE MATERIALS (2004)

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Article Materials Science, Multidisciplinary

Lattice axial ratio and large uniaxial magnetocrystalline anisotropy in L10-type FePd single crystals prepared under compressive stress -: art. no. 224408

H Shima et al.

PHYSICAL REVIEW B (2004)

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Article Chemistry, Physical

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

SSP Parkin et al.

NATURE MATERIALS (2004)

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Article Physics, Applied

Energy landscape and thermally activated switching of submicron-sized ferromagnetic elements

W E et al.

JOURNAL OF APPLIED PHYSICS (2003)

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Article Physics, Condensed Matter

Integration of single crystal La0.7Sr0.3MnO3 films with Si(001)

A Tiwari et al.

SOLID STATE COMMUNICATIONS (2002)

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Article Physics, Applied

Ultrahigh density vertical magnetoresistive random access memory (invited)

JG Zhu et al.

JOURNAL OF APPLIED PHYSICS (2000)

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