期刊
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
卷 24, 期 6, 页码 -出版社
MDPI
DOI: 10.3390/ijms24065255
关键词
organotin-Schiff bases; organotin(IV) complexes; pentacoordinated organotin; hybrid film; PEDOT; PSS; graphene; optical properties; electrical properties
This study reports the synthesis of four pentacoordinated organotin(IV) complexes through a one-pot reaction using 2-hydroxy-1-naphthaldehyde, 2-amino-3-hydroxypyridine, and organotin oxides. The complexes were characterized using various spectroscopic and NMR techniques. The complex based on 2,2-diphenyl-6-aza-1,3-dioxa-2-stannanaphtho[1,2-h]pyrido[3,2-d]cyclononene exhibited a distorted five-coordinated molecular geometry. Hybrid films of these complexes embedded in PEDOT:PSS with graphene were deposited for potential applications in photovoltaic devices.
The synthesis of four pentacoordinated organotin(IV) complexes prepared in a one-pot reaction from 2-hydroxy-1-naphthaldehyde, 2-amino-3-hydroxypyridine and organotin oxides is reported. The complexes were characterized by UV-Vis, IR, MS, H-1, C-13 and Sn-119 NMR techniques. The compound based on 2,2-diphenyl-6-aza-1,3-dioxa-2-stannanaphtho[1,2-h]pyrido[3,2-d]cyclononene revealed the formation of a monomeric complex with a distorted five-coordinated molecular geometry intermediate between the trigonal bipyramidal and square pyramidal. In order to find possible applications in photovoltaic devices, hybrid films of organotin(IV) complexes embedded in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with graphene were deposited. The topographic and mechanical properties were examined. The film with the complex integrated into the cyclohexyl substituent has high plastic deformation, with a maximum stress of 1.69 x 10(7) Pa and a Knoop hardness of 0.061. The lowest values of 1.85 eV for the onset gap and 3.53 eV for the energy gap were obtained for the heterostructure having the complex with the phenyl substituent. Bulk heterojunction devices were fabricated; these devices showed ohmic behavior at low voltages and a space-charge-limited current (SCLC) conduction mechanism at higher voltages. A value of 0.02 A was found for the maximum carried current. The SCLC mechanism suggests hole mobility values of between 2.62 x 10(-2) and 3.63 cm(2)/V(.)s and concentrations of thermally excited holes between 2.96 x 10(18) and 4.38 x 10(18) m(-3).
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