4.7 Article

Structural, optical, and H2 gas sensing analyses of Cr doped CuO thin films grown by ultrasonic spray pyrolysis

期刊

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
卷 48, 期 54, 页码 20804-20814

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ijhydene.2023.03.057

关键词

CuO thin films; Ultrasonic spray pyrolysis; XRD; Bandgap; PL; H 2 gas sensor

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The effects of different Cr doping concentrations on the morphology, structure, optical and gas sensing properties of CuO thin films were investigated. The results showed that Cr doping altered the crystal structure, morphology, and optical properties of CuO, and significantly enhanced the sensitivity of the gas sensor.
Here, a specific metal oxide (CuO) and its impurity (Cr) added composites were grown onto glass substrates as nanostructured thin films by executing ultrasonic spray pyrolysis method. The effects of the varied Cr dopant concentration on the morphological, struc-tural, optical and H2 gas sensor properties of the synthesized CuO thin films were deter-mined by conducting scanning electron microscopy, X-ray Diffraction, X-ray photoelectron spectroscopy, photoluminescence spectroscopy, ultraviolet-visible spectroscopy, and gas detection analyses. The X-Ray Diffraction analysis revealed the presence of CuO crystals with predominant (111) plane and it changed to (002) orientation for the doped samples, where crystallite sizes varied between 32 and 46 nm. The structural studies disclosed that the crystalline structure modified due to the added impurities. The scanning electron microscopy observations unveiled polyhedron-like shape formations of the synthesized nanostructures which also showed clear indications of changed morphology due to the impacts of different Cr doping percentages. Besides, the presence of copper, oxygen, and chromium was confirmed by EDX elemental analysis as well as X-ray photoelectron spectroscopy. The optical examination concluded that absorbance values followed a random trend with respect to the increased impurity contents while bandgap decreased with the increase of doping concentration. And, it was also noted that the luminescent emission peaks decreased in the photoluminescence spectroscopy as a result of introduced impurity levels. Finally, H2 responsivity was detected for the grown films and found out that the impurity doping notably increased the sensitivity of the gas sensor based on the prepared CuO nanostructures.& COPY; 2023 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

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