期刊
ADVANCED MATERIALS
卷 27, 期 41, 页码 6431-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502375
关键词
-
类别
资金
- Research Grants Council of Hong Kong [N_CUHK405/12, AoE/P-02/12, CUHK1/CRF/12G, CUHK142075E/15]
- CUHK Group Research Scheme
- Innovation and Technology Commission [ITS/096/14]
- National Natural Science Foundation of China [61229401, 11574119]
Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据