Measurement based study of microwave double channel pHEMT device

The paper presents the measurement study of a double channel pHEMT device. Its focus is on examining impacts of several parameters including probe pitch size, position and the applied pressure on the measurements. The impact of probe pitch size, position and applying suitable amount of pressure and more pressure than required on the measuring perspective of a double channel pHEMT was investigated. As noted from the collected data, these impacts are most likely related to the stability factor, current gain and maximum available gain of the studied microwave device. The measurement was done using two probes with pitch sizes of 200 mu m and 150 mu m, and the probes were placed in the middle of the device's contact pads while exerting appropriate pressure. For double channel pHEMT on wafer, the outcome can be deemed similar for both pitch sizes. On the other hand, the probe with pitch size of 200 mu m is utilised for applying more pressure than required where the probe occupied the entire pads of the device and the findings are skewed. Finally, it was found that the RF measurement is frequently affected by these conditions while the DC measurements are unaffected or have a minor effect.

Automated summary

The paper presents a measurement study of a double channel pHEMT device and investigates the impacts of probe pitch size, position, and applied pressure on the measurements. The study reveals that these impacts are closely related to the stability factor, current gain, and maximum available gain of the microwave device. The RF measurement is frequently affected by these conditions, while the DC measurements remain unaffected or have minor effects.