期刊
ADVANCED MATERIALS
卷 27, 期 25, 页码 3748-3754出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201500990
关键词
amorphous ultrathin films; black phosphorus; field-effect transistors; pulsed laser deposition; wafer-scale
类别
资金
- HKU/PolyU
- HKUST Collaborative Research Fund (CRF) [HKU9/CRF/13G]
- HKUST (PolyU Grant) [E-RD50]
- PolyU Project of Strategic Importance [1-ZE14]
Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.
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