4.7 Article

Low temperature chemiresistive gas sensing performance towards oxidising gas based on chemically prepared Ga doped ZnO nanorods

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INORGANIC CHEMISTRY COMMUNICATIONS
卷 152, 期 -, 页码 -

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ELSEVIER
DOI: 10.1016/j.inoche.2023.110691

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Ga doped ZnO; Reflux method; Nanorods; XPS; NO2 gas sensing

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The study investigated a highly sensitive and selective NO2 gas sensor based on Gallium (Ga) doped ZnO (GZO) nanorods, which were synthesized using a simple and low-cost reflux method. Analysis using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and photoluminescence (PL) spectroscopy revealed the doping characteristics and properties of the undoped ZnO and GZO nanorods. The GZO nanorods exhibited a gas sensitivity of approximately 1987% for 100 ppm NO2 gas at an operating temperature of 175 degrees C.
The highly sensitive and selective NO2 gas sensor based on Gallium (Ga) doped ZnO (GZO) nanorods via a simple and low cost reflux method was investigated. The doping characteristics of undoped ZnO and GZO nanorods were analyzed by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron micro-scopy (SEM), and photoluminescence (PL) spectroscopy. The XRD pattern show the synthesized undoped ZnO and GZO nanorod has polycrystalline in nature with a hexagonal crystal structure. SEM analysis confirms the rod-like morphology with the different aspect ratio. PL studies confirm the more oxygen vacancies in GZO nanorod compared to the undoped ZnO nanorods. Furthermore, the GZO nanorods exhibit the gas sensitivity of similar to 1987 % for 100 ppm NO2 gas at 175 degrees C operating temperature.

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