期刊
INORGANIC CHEMISTRY COMMUNICATIONS
卷 151, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.inoche.2023.110588
关键词
XRD; Rietveld; Dielectric; Impedance; Ferroelectric; Ferromagnetic
The lead-free polycrystalline compound 0.5(NdFeO3)-0.5(Ba0.5Sr0.5TiO3) (NFO-BST) was successfully prepared through conventional solid-state reaction route. The compound exhibited a tetragonal structure with a lattice parameter of a = b = 3.99(4) Å, and c = 4.017(2) Å, confirmed by X-ray Diffraction (XRD) and Rietveld Refinement. The sample showed a dielectric constant of 408.32 at 100 Hz frequency at room temperature, making it suitable for microwave absorbers. The compound also displayed ferroelectric and ferromagnetic properties, indicating potential applications in multiferroic devices.
The lead-free polycrystalline compound 0.5(NdFeO3)-0.5(Ba0.5Sr0.5TiO3) (NFO-BST) was prepared successfully through conventional solid-state reaction route at high temperatures. Single-phase formation of the studied compound was examined by X-ray Diffraction (XRD) patterns at room temperature and the sample possess tetragonal structure with space group of P4mm having lattice parameters of a = b = 3.99(4) ?, and c = 4.017(2) ?, and is also confirmed from Rietveld Refinement. Crystallite and grain sizes of the sample were measured as 71.286 nm and 157 nm respectively. This compound has a dielectric constant of 408.32 at 100 Hz frequency at room temperature with low tangent loss and thus is suitable for microwave absorbers. The dielectric anomalies seen in this material are due to the magnetic transitions of NdFeO3 and the ferroelectric-paraelectric transitions of Ba0.5Sr0.5TiO3. The activation energy (Ea) of the proposed sample was obtained as 1.63 eV at 100 Hz. Remanent polarization (2Pr) value for the loop is recorded as 24.2 mu C/cm2 at 1.04 kV/cm coercive field (EC), thus possessing a high energy storage density that can have a wide range of applications. At a coercive field of 1.5 kOe, our magnetization loop predicts a hysteretic loop with small residual magnetization (Mr = 0.015 emu). The grain and grain boundary contribution is evident from the complex impedance spectroscopy. Existence of both ferroelectric and ferromagnetic properties suggests its usage in new multiferroic device. Further the UV-VIS analysis recommends its utility in semiconductor photovoltaic cells.
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