InAs nanowire visible-infrared detector photoresponse engineering

This review summarizes the operational principles of Indium Arsenide (InAs) nanowire photodetectors under different light conditions and the various approaches designed to optimize their performance. InAs nanowires are highly regarded as potential candidates for the next generation of optoelectronic devices, attributed to their exceptional optical and electrical characteristics. However, the surface states and defects of InAs nanowires lead to complex photoresponse mechanisms under different illumination conditions and greatly affect their performance. Therefore, various approaches have been proposed to enhance their performance, including surface passivation, doping, and construction of heterojunctions, etc. This review categorizes these different techniques, discusses their respective advantages and limitations, and provides an outlook on future developments in this field.

Automated summary

This review summarizes the operational principles of Indium Arsenide (InAs) nanowire photodetectors under different light conditions and the various approaches designed to optimize their performance. The exceptional optical and electrical characteristics of InAs nanowires make them potential candidates for next-generation optoelectronic devices. However, the surface states and defects of InAs nanowires lead to complex photoresponse mechanisms under different illumination conditions, thus greatly affecting their performance. Various approaches, including surface passivation, doping, and construction of heterojunctions, have been proposed to enhance their performance. This review categorizes and discusses these techniques, highlighting their advantages, limitations, and future prospects.