4.8 Article

Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation

期刊

IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 38, 期 5, 页码 6143-6156

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2023.3245331

关键词

Insulated gate bipolar transistors; Finite element analysis; Transient analysis; Surface morphology; Resistance heating; Molybdenum; Logic gates; Heat dissipation; press-pack insulated gate bipolar transistor (PP-IGBT); short-circuit capability; short-circuit failure

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This article proposes an optimization method to improve the short-circuit capability of PP-IGBT by using silver conductive adhesive (SCA) to enhance active edge heat dissipation. The short-circuit capability is evaluated through experimental tests and the failure conditions and positions are obtained. Finite element method simulation is used to analyze the electrical-thermal-mechanical stress of PP-IGBT under short-circuit transients and the optimization method using SCA is proposed. The short-circuit capability of PP-IGBT with SCA coating is tested and verified, and the potential of SCA coating under different short-circuit voltage levels is discussed.
Press-pack insulated gate bipolar transistor (PP-IGBT) device has been widely used in VSC-HVdc converters. Research on the optimization method of short-circuit capability is crucial to improve the short-circuit robustness and reliability of PP-IGBT. Aiming at the problem of device failure due to transient overstress induced by press-pack packaging, this article proposes a short-circuit capability optimization method of PP-IGBT that improving the active edge heat dissipation by using silver conductive adhesive (SCA). First, the short-circuit capability is evaluated by experimental test, and the failure conditions and positions are obtained. Second, based on the finite element method simulation, the electrical-thermal-mechanical stress of PP-IGBT under short-circuit transients is analyzed and the optimization method by using SCA is proposed. Third, the short-circuit capability of PP-IGBT with SCA coating is tested and verified. Lastly, the potential of the SCA coating under different short-circuit voltage levels is discussed. The results indicate that the transient thermal shock at the active corner of the chip that is not in direct contact with the emitter molybdenum plate causes device failure and improving the active edge heat dissipation by SCA could be an effective approach to improve the short-circuit capability of PP-IGBT.

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