4.8 Article

A 13.56-MHz Wireless Power Transfer System With a Wide Operating Distance and Load Range for Biometric Smartcards

期刊

IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 38, 期 4, 页码 5576-5585

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2022.3232609

关键词

Biometric smartcard; inductive link; reflected impedance; wide distance and load variation; wireless power transfer (WPT)

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This article presents a wireless power transfer system that provides extended controllability of transmitting power for a wide range of link distances and load variations. The system uses a single-stage rectification and regulation process to deliver a stable 3-V dc voltage from a 13.56-MHz sinusoidal waveform. The transmitting power is controlled by the reflected impedance from the receiver to the transmitter, enabling high power transfer efficiency under different link distances and load variations. The proposed system also includes rising and falling edge detectors for low power and accurate zero current detection, as well as a digital voltage regulation controller for stable dc supply with fast response.
This article presents a wireless power transfer system for an increased dynamic range of link distance and load with extended controllability of transmitting power. Under wide link distance and load variation, rectification and regulation in a single-stage to provide a stable 3-V dc voltage V-L from a 13.56-MHz sinusoidal waveform at the receiver (RX) LC tank is performed. For high end-to-end power transfer efficiency and robust operation under link and load variations, the transmitting power P-TX is con-trolled by the reflected impedance from the RX to the transmitter (TX). To extend the controllability of the P-TX, antennae with high quality factors and a series-connected RX LC tank structure are applied. A working-only-when-needed rising edge detector and a Delta S-based falling edge detector for low power and accurate zero current detection are presented. A digital Delta S-based voltage regu-lation controller is adopted for stable dc supply with fast transient response. The implemented IC in a standard 65-nm CMOS process measures 0.14-mm(2) active silicon area. The proposed work operates under a wide range of link distance (30-185 mm) with a large load dynamic range (10000x, 60 O-600 k Omega).

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