Single Event Effects in 3-D NAND Flash Memory Cells With Replacement Gate Technology

We studied the heavy-ion single event effect (SEE) response of 3-D NAND flash memory cells with charge-trap (CT)-based replacement gate (RG) technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed. The behavior of RG cells is compared with previous generations of flash NAND memory cells with floating-gate (FG) architecture, both planar and 3-D. The cell array structure, the technology parameters, and the materials impacting radiation susceptibility of the different types of cells are discussed.

Automated summary

This study investigates the heavy-ion single event effect (SEE) response of 3-D NAND flash memory cells with charge-trap-based replacement gate technology. It discusses the error cross sections, threshold voltage shifts, and underlying mechanisms. The behavior of the RG cells is compared with previous generations of flash NAND memory cells with floating-gate architecture, both planar and 3-D. The study also examines the cell array structure, technology parameters, and materials affecting radiation susceptibility of different cell types.