期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 -, 期 -, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2023.3269409
关键词
Stress; Behavioral sciences; MODFETs; HEMTs; Electron traps; Wide band gap semiconductors; Aluminum gallium nitride; AlGaN/GaN HEMTs; C-doped GaN buffer; dynamic ON resistance; electron trapping
In this study, a computational framework is used to investigate the physical mechanisms of electron trapping in carbon-doped GaN buffer in AlGaN/GaN HEMTs. Device variants with higher lateral electric field exhibit a significant increase in dynamic ON resistance beyond a critical drain stress voltage. Detailed analysis reveals that electron injection and trapping in the C-doped GaN buffer are responsible for the observed dynamic ON resistance behavior. Physical insights into electron injection and trapping behavior are provided through analysis of field evolution, field-enhanced trapping, and its impact on leakage current path within the GaN buffer. The proposed mechanism of field-enhanced electron trapping is validated by computations with device variants having field-independent trapping process and different buffer trap activation energies.
In this work, a well-calibrated computational framework is used to probe the physical mechanisms leading to electron trapping in the carbon-doped GaN buffer in AlGaN/GaN HEMTs. Device variants having higher lateral electric field were found to exhibit a drastic increase in dynamic ON resistance beyond a critical drain stress voltage. Computations were done while considering trapping on the device surface, with and without accounting for hot electrons, as well as trapping in the GaN buffer. Detailed analysis established electron injection and trapping in the C-doped GaN buffer to be responsible for the observed dynamic ON resistance behavior. Physical insights are provided into the electron injection and trapping behavior by analyzing field evolution near the field plate edge, field-enhanced trapping, and its impact on the leakage current path within the GaN buffer. Finally, the proposed mechanism of field-enhanced electron trapping is validated by computations with device variants having field-independent trapping process and different buffer trap activation energies.
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