Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control

Current quantum systems based on spin qubits are controlled by classical electronics located out-side the cryostat. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward scalable quantum computers. Thus, we propose a scalable memristor-based programmable dc source that can per-form biasing of quantum dots (QDs) inside the cryostat. This novel cryogenic approach would enable to control the applied voltage on the electrostatic gates by programming the resistance of the memristors, thus storing in the latter the appropriate conditions to form the QDs. In this study, we first demonstrate multilevel resistance programming of TiO2 memristors at 4.2 K, an essential feature to achieve voltage tunability of the memristor-based dc source. We then report hardware-based simulations of the electrical performance of the proposed dc source. A cryogenic TiO2 memristor model fit on our experimen-tal data at 4.2 K was used to show a 1 V voltage range and 100 mu V resolution in situ memristor-based dc source. Finally, we simulate the biasing of double QDs (DQDs), enabling 120 s stability diagrams. This demonstration is a first step toward advanced cryogenic applications for resistive memories, such as cryogenic control electronics for quantum computers.

Automated summary

Current quantum systems based on spin qubits suffer from a bottleneck caused by the use of classical electronics located outside the cryostat. To address this issue, a scalable memristor-based programmable dc source is proposed to control the biasing of quantum dots (QDs) inside the cryostat. Experimental resistance programming and simulations demonstrate the feasibility of this cryogenic approach, showing a wide voltage range and high resolution in situ memristor-based dc source for controlling double quantum dots (DQDs).