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Article
Engineering, Electrical & Electronic
Pengying Chang et al.
Summary: In order to enhance the performance of HfO2-based ferroelectric (FE) tunnel junctions (FTJs) and their crossbar arrays, we propose using low-barrier Ta2O5 dielectric material to increase device asymmetry. By inserting Ta2O5 between two FE HfO2 barriers for resonant band engineering, both JON and TER ratio are significantly improved, while good retention is maintained due to the high permittivity of Ta2O5. Additionally, high current rectification ratio and negative differential resistance are observed. These abundant physical effects in HfO2/Ta2O5/HfO2 based MFIFM resonant FTJs may enable selector-less crossbar.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Jiajie Yu et al.
Summary: A low temperature annealed Zr-Rich Hf_xZr_(1-x)O_2 film based ferroelectric tunnel junction is fabricated on a silicon substrate. The film exhibits excellent ferroelectricity under operating voltages of 3.3V, 3.5V, and 3.7V, with the largest residual polarization 2Pr exceeding 50 μC/cm2. The device operates at an extremely high speed of 50ns and achieves a high tunneling electro resistance ratio (>50). Based on first-principle calculations, it is found that Zr-Rich Hf_xZr_(1-x)O_2 films will exhibit more O-phase and less T-phase. This research lays the foundation for improving the performance of HfO2 based ferroelectric tunneling junctions for future ferroelectric applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Jae Hur et al.
Summary: This study characterizes HfO2-based FTJ at cryogenic temperature for the first time and finds significant improvements in both retention and endurance characteristics at 77 K. The read voltage is found to be critical for optimizing performance in terms of oN-current, OFF-current, and their ratio at 77 K.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Pengying Chang et al.
Summary: The conduction mechanisms of ferroelectric tunnel junctions (FTJs) using metal-ferroelectric-insulator-semiconductor (MFIS) structures on n- and p-type semiconductors are clarified by a newly developed model, which has been verified by experimental results. The model includes electron tunneling from the conduction and valence bands, as well as hole tunneling from the valence band, to calculate the read current in the ON/OFF state of MFIS-FTJs. The model explains the unexpected polarization polarity of the ON/OFF state in p-type semiconductors and the difference in tunneling electroresistance (TER) ratio between n- and p-type MFIS-FTJs.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Yi-Shan Kuo et al.
Summary: A low-cost fabrication process for Hf1-xZrxO2 (HZO) nonvolatile memory (NVM) was proposed, and a ferroelectric tunnel junction (FTJ) device with tunable conductance for neural network applications was successfully fabricated. The FTJ device exhibits excellent performances and has high potential to be an ideal emerging memory for neuromorphic computing.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Pengying Chang et al.
Summary: This study investigates the tunneling processes of ferroelectric tunnel junction (FTJ) based on metal-ferroelectric-insulator-semiconductor (MFIS) stack for both n-type and p-type semiconductor electrodes using an experimentally calibrated model. The research shows that the conduction modes of n-type and p-type MFIS can be classified depending on the contribution of minority carriers in the semiconductor, and the optimal tunneling electroresistance (TER) for each device is achieved under different operating conditions. The findings provide insights into the band structure engineering of the MFIS structure for designing and optimizing FTJ performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
Jing Su et al.
Summary: The proposal of energy band engineering as a means to enhance tunneling electroresistance in ferroelectric tunnel junctions shows promising results in controlling the conductance states depending on the polarization orientation. This approach involves the use of an ultrathin dielectric layer with a smaller band gap embedded in the ferroelectric barrier layer, leading to a giant ON/OFF conductance ratio for potential device applications.
Article
Engineering, Electrical & Electronic
Yuan-Chun Luo et al.
Summary: Ferroelectric tunnel junction (FTJ) based crossbar arrays show potential for low-power and area-efficient neuro-inspired computing, with suggestions to improve current density through the use of ultra-thin FTJs and stacked capacitors.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2021)
Article
Physics, Applied
Pengying Chang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2020)
Editorial Material
Engineering, Electrical & Electronic
Xinran Wang et al.
NATURE ELECTRONICS
(2020)
Article
Engineering, Electrical & Electronic
Mengqi Fan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Jike Lyu et al.
ACS APPLIED ELECTRONIC MATERIALS
(2019)
Article
Engineering, Electrical & Electronic
Masaharu Kobayashi et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2019)
Article
Physics, Applied
Ruifang Du et al.
APPLIED PHYSICS LETTERS
(2014)
Article
Chemistry, Physical
Zheng Wen et al.
Article
Physics, Applied
T. S. Boescke et al.
APPLIED PHYSICS LETTERS
(2011)
Article
Materials Science, Multidisciplinary
M. K. Li et al.
Article
Physics, Multidisciplinary
MY Zhuravlev et al.
PHYSICAL REVIEW LETTERS
(2005)
Review
Engineering, Electrical & Electronic
A Gehring et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
(2004)
Article
Engineering, Electrical & Electronic
A Gehring et al.
SOLID-STATE ELECTRONICS
(2002)
