Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors

This study presents a technique for simultaneous and consistent extraction of the mobility enhancement factor (? ) and the threshold voltage (V-T) with parasitic source and drain resistances (RS and RD) in amorphous oxide semiconductor (AOS) thin film transistors (TFTs). This technique allows for the extraction of R-S from R(D )as well as the accurate extraction of V-T and ? with only I-V characteristics of the saturation operation in a single AOS TFT. The proposed technique was applied to amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with various structures. For intentional asymmetry, we confirmed the consistency with an external resistor (R-ext = 10, 20, 30 kO). Extracted parameters (R-S, R-D, V-T, and ? ) by the proposed method were compared with parameters extracted by other methods for verification. Furthermore, the drain current (ID) was well reproduced using the extracted parameters regardless of R-ext.

Automated summary

This study proposes a technique for simultaneous and consistent extraction of the mobility enhancement factor (μ) and the threshold voltage (V_T) with parasitic source and drain resistances (RS and RD) in amorphous oxide semiconductor (AOS) thin film transistors (TFTs). The technique allows for the extraction of RS from RD as well as the accurate extraction of VT and μ with only I-V characteristics of the saturation operation in a single AOS TFT. The technique was applied to amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with various structures, and the extracted parameters were compared with those extracted by other methods for verification. The drain current (ID) was well reproduced using the extracted parameters regardless of the value of the external resistor (R_ext).