Vertical Ion-Coupling Ga2O3 TFT With Spatiotemporal Logic Encryption

The security of critical hardware components is of great importance for spawning an era of an integrated circuit. Here, a vertical short-channel Ga2O3 thinfilm transistor (TFT) is proposed for addressing such security threats. The device has an ultrashort channel of -10 nm due to the vertical architecture. It not only operates well at a low voltage (2 V) with a reasonable current ON -OFF ratio (I-ON/I-OFF) (>10(3)), but also realizes the spatiotemporal logic encryption by tuning the ion-coupling path. Moreover, the decryption function of AND logic can only be unlocked by reducing the distance between the gate and channel. Therefore, the proposed device can be regarded as a great step to realize safe electronics in the future.

Automated summary

A vertical short-channel Ga2O3 thin-film transistor (TFT) is proposed to address security threats in critical hardware components. The device has an ultrashort channel of -10 nm and operates well at a low voltage (2 V) with a reasonable current ON -OFF ratio (I-ON/I-OFF) (>10(3)). Additionally, it achieves spatiotemporal logic encryption by tuning the ion-coupling path and can only unlock the decryption function of AND logic by reducing the distance between the gate and channel. Therefore, this proposed device is regarded as a significant step towards realizing safe electronics in the future.