Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.

Automated summary

This paper discusses the impact of TID on basic amplifier stages biased near the device threshold voltages. Circuit simulations were performed using existing TID degradation-aware transistor models. The simulation methodology accounts for operating currents comparable to TID-induced leakage currents. It is found that at certain TID levels, a specific DC input voltage can maintain the performance characteristics such as voltage gain before and after irradiation.