4.5 Article

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCAD.2022.3204515

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Computing-in-memory (CiM); content addressable memory (CAM); hyperdimensional computing (HDC); magnetic tunneling junction (MTJ)

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This article proposes an ultracompact CAM design using a 1T-1MTJ structure in each cell to improve area efficiency and speed. Evaluation results show that compared to state-of-the-art 15T-4MTJ and 20T-6MTJ CAM designs, the proposed 1T-1MTJ-based CAM design improves area efficiency by 179x/301x and achieves a speedup of 54.6x/12.8x in hyperdimensional computing inference compared to GPU and 20T-6MTJ CAM approaches.
Content addressable memories (CAMs) are a promising category of computing-in-memory (CiM) elements that can perform highly parallel and efficient search operations for routers, pattern matching, and other data-intensive applications. Various magnetic tunnel junction (MTJ)-based CAM designs have been proposed to realize zero standby power and high-performance search. However, due to the relatively small tunnel magneto-resistance (TMR) ratio, MTJ-based CAMs require extra transistors and differential MTJ branches to distinguish between the parallel and anti-parallel resistance states, resulting in significant area and energy overhead. In this article, we propose a device-circuit co-design approach for an ultracompact CAM design by only exploiting a 1T-1MTJ structure in each cell. We propose a 2-step search scheme to enable the parallel in-memory search operation across the proposed CAM array and demonstrate the sufficient sensing margin of the array in a successful search operation. Evaluation results suggest that our proposed 1T-1MTJ-based CAM design improves 179x/301x area efficiency compared with the state-of-the-art 15T-4MTJ/20T-6MTJ CAM design. Application benchmarking on hyperdimensional computing (HDC) inference shows a 54.6x/12.8x speedup compared with GPU/20T-6MTJ CAM-based approaches.

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