期刊
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
卷 42, 期 3, 页码 978-986出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCAD.2022.3189837
关键词
Memristors; Transconductance; Voltage; Capacitors; Transistors; MOSFET; Semiconductor device modeling; Current-mode (CM); high frequency; memristor; operational transconductance amplifier (OTA); voltage differencing buffered amplifier (VDBA)
This article proposes a resistorless electronically tunable grounded and floating memristor emulator based on current-mode building blocks. The proposed emulator shows robustness and maintains performance under non-ideal conditions such as temperature fluctuations and process corner variations. Layout and simulation using CADENCE environment validate the accuracy and stability of the emulator. The pinched hysteresis loop can reach up to 5 MHz, and the emulator maintains good performance in terms of speed and operating range. Binary frequency shift keying (BFSK) experiments have been conducted to validate its functionality in applications such as communication systems, analog computation, and neuromorphic and biological systems.
The design of the memristor emulator, which has found widespread of applications in analog computation, neuromorphic and biological systems, communications, etc., is much sought for. In this article, a resistorless electronically tunable grounded and floating memristor emulator by employing current-mode (CM) building blocks: operational transconductance amplifier (OTA) and voltage differencing buffered amplifier (VDBA) has been proposed. The proposed emulators can be configured as incremental and decremental operations. The robustness of the proposed emulator has been verified by performing various analyses: nonideal interpretations, process corner variations, temperature fluctuations, and nonvolatility behavior. The layout has been performed, and the theoretical fingerprint characteristics have been simulated and observed using 180-nm CMOS process parameters in the Cadence environment. The pinched hysteresis loop of the proposed memristor emulator maintains up to 5 MHz. The proposed memristor emulator uses less number of circuit components, but it maintains performance in terms of speed and operating range of frequency. Binary frequency shift keying (BFSK) has been performed using the proposed memristor to validate its functionality in the application. This memristor emulator with superior performance can be integrated into the communication system, analog computation, neuromorphic and biological systems, etc.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据