4.6 Article

A Rapid Matching Network Layout Synthesis and Optimization Method for High-Performance MMIC PAs Using Modified Implicit Space Mapping

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2022.3217776

关键词

Integrated circuit modeling; Manganese; Layout; Dual band; Computational modeling; Data models; Capacitors; Power amplifier (PA); millimeter wave (mmWave); implicit space mapping (ISM); dual-band

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In this paper, a new systematic approach of matching network (MN) layout synthesis and optimization for power amplifiers (PAs) is proposed based on implicit space mapping (ISM). The proposed modified ISM can shift the optimization work to the circuit schematic simulations by calibrating carefully-selected auxiliary parameters in the circuit based on EM data. To validate the proposed method, an eligible dual-band inter-stage MN layout is rapidly optimized with only 10 runs of EM-simulations, while a corresponding 16/26.5 GHz concurrent dual-band PA is implemented in a 0.15-μm GaAs pHEMT technology. It exhibits a measured small-signal gain of 21.7/14.1 dB, peak power-added efficiency of 30.2%/40.5%, and saturated output power of 24.8/28.1 dBm with a compact chip size of 2.4 mm(2).
In this brief, a new systematic approach of matching network (MN) layout synthesis and optimization for power amplifiers (PAs) is proposed based on implicit space mapping (ISM). Commonly, the performance discrepancy between schematic and initial layout is huge, especially for millimeter wave (mmWave) PAs. To address this issue, the proposed modified ISM can shift the optimization work to the circuit schematic simulations by calibrating carefully-selected auxiliary parameters in the circuit based on EM data. To validate the proposed method, an eligible dual-band inter-stage MN layout is rapidly optimized with only 10 runs of EM-simulations, while a corresponding 16/26.5 GHz concurrent dual-band PA is implemented in a 0.15- $\mu \text{m}$ GaAs pHEMT technology. It exhibits a measured small-signal gain of 21.7/14.1 dB, peak power-added efficiency of 30.2%/40.5%, and saturated output power of 24.8/28.1 dBm with a compact chip size of 2.4 mm(2).

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