Gate Driver on Array With Multiple Outputs and Variable Pulse Widths for Low-Temperature Polysilicon and Oxide (LTPO) TFTs Driven AMOLED Displays

A gate driver on array (GOA) circuit was proposed for low-temperature polysilicon and oxide (LTPO) thin-film transistor (TFT) hybrid-driven active matrix organic light-emitting diode (AMOLED) displays with both high and low refresh rate operation. The GOA generates multiple types of scanning signals by reusing shift registers so that three signal pulses are output parallelly within a single stage to scan p-and n-type switching TFTs and emission TFT of the AMOLED pixels, respectively, leading to a 30% reduction in the layout area. Furthermore, the pulse-width of the scan signals for the emission TFT can be programed simply by changing the number of input pulses to vary refresh rates. The fabricated GOAs work well even with the pulse width reduced to 2.9 mu s.

Automated summary

This study presents a gate driver on array (GOA) circuit for low-temperature polysilicon and oxide thin-film transistor hybrid-driven active matrix organic light-emitting diode (AMOLED) displays, capable of both high and low refresh rate operation. The GOA utilizes shift registers to generate multiple types of scanning signals, allowing for parallel output of three signal pulses within a single stage to drive various TFTs in the AMOLED pixels. This approach reduces the layout area by 30%. Additionally, the scan signals for the emission TFT can be programmed by adjusting the number of input pulses, enabling different refresh rates. The fabricated GOAs demonstrate reliable performance even with a reduced pulse width of 2.9 μs.