4.5 Article

CuO-Based Solar-Blind Photodetector for Flexible Electronics

期刊

IEEE PHOTONICS TECHNOLOGY LETTERS
卷 35, 期 12, 页码 692-695

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2023.3272514

关键词

Flexible electronics; solution-process; direct bandgap CuO; solar-blind

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In this study, we fabricated a UV-C photodetector using wide bandgap CuO nanostructures on a flexible substrate. The as-fabricated device showed a photo-sensitivity of approximately 15, a photo-responsivity of approximately 485 mA/W, and a photo-detectivity of approximately 1.4 x 10^11 Jones with 220 nm excitation. The external quantum efficiency (EQE) and linear-dynamic range (LDR) of the device were calculated to be 74% and 56 dB, respectively, at 220 nm excitation.
Flexible UV-C i.e. solar-blind detectors are in high demand, not only due to their potential for non-line of sight communication, and environmental monitoring but also for medical technology. Now-a-days, the development of UV-C (200 nm to 270 nm) light sources and detectors is highly essential. Herein, we report the fabrication of UV-C photodetector using ultrawide bandgap CuO nanostructures (NSs) with E-g=3.98 eV, on a flexible substrate. All solution-based technique was followed for the growth of CuO NSs on poly-ethylene terephthalate (PET) substrate. The as-fabricated device has shown photo-sensitivity of similar to 15, photo-responsivity of similar to 485 mA/W and photo-detectivity of similar to 1.4 x 10(11) Jones with 220 nm excitation (at -20 V applied bias). Moreover, the external quantum efficiency (EQE) and linear-dynamic range (LDR) of the device were calculated to be 74 % and 56 dB, respectively at 220 nm excitation.

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