High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric

Article Engineering, Electrical & Electronic

Realization of Maximum 2 A/mm Drain Current on Top-Gate Atomic-Layer-Thin Indium Oxide Transistors by Thermal Engineering

Pai-Ying Liao et al.

Summary: This work demonstrates record high maximum drain current of top-gate indium oxide transistors with scaled dimensions and low thermal budget. By utilizing highly resistive silicon substrate, the self-heating effect is alleviated, allowing for significantly higher drain current. Quantitative studies on the self-heating effect and channel temperature under different substrates are also presented.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Article Engineering, Electrical & Electronic

Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors

Kaizhen Han et al.

Summary: This study presents high-performance amorphous Indium-Gallium-Zinc-Oxide nanowire field-effect transistors (alpha-IGZO NW-FETs) with ultrascaled nanowire width, utilizing a high-k HfO2 gate dielectric, water-free ozone-based ALD process, and novel digital etch technique for IGZO material. The downscaled W-NW significantly improves subthreshold swing without sacrificing ON-state performance, while the shrinking of L-CH boosts the extrinsic transconductance. These ultrascaled alpha-IGZO NW-FETs could be important for applications requiring high performance and high density.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Engineering, Electrical & Electronic

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

Mengwei Si et al.

Summary: This study demonstrates the experimental realization of In2O3 3-D transistors coated on fin structures and integrated circuits using an ALD process compatible with BEOL. High-performance planar back-gate and top-gate In2O3 transistors with various characteristics are achieved through channel thickness engineering and post-deposition annealing. The results suggest that ALD oxide semiconductors and devices offer unique advantages and show promise for BEOL-compatible monolithic 3-D integration for integrated circuits.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Engineering, Electrical & Electronic