High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric

In this work, high-performance top-gate indium-tin-oxide (ITO) transistors with high carrier mobility of 60 cm(2)/V center dot s have been successfully demonstrated using optimized atomic layer deposited (ALD) La-doped HfO2 as the top-gate dielectric. The scaled device with a channel length of 50 nm exhibits a high current on/off ratio over 7 x 10(9) owing to the excellent electrostatic control. A maximum output current of 1680 mu A/mu m with a remarkable carrier velocity of 0.87 x 107 cm/s has also been achieved due to the record low contact resistance of 180 Omega center dot mu m. The on- and off-state performance of our ITO transistors are the highest among previous top-gate amorphous oxide semiconductors.

Automated summary

We successfully demonstrated high-performance ITO transistors with high carrier mobility (60 cm(2)/V center dot s) using optimized ALD La-doped HfO2 as the top-gate dielectric. The scaled device with a channel length of 50 nm showed a high current on/off ratio (over 7 x 10(9)) due to excellent electrostatic control. It also achieved a maximum output current of 1680 mu A/mu m and a remarkable carrier velocity of 0.87 x 107 cm/s, thanks to the record low contact resistance of 180 Omega center dot mu m. The on- and off-state performance of our ITO transistors are the highest among previous top-gate amorphous oxide semiconductors.