期刊
CERAMICS INTERNATIONAL
卷 41, 期 -, 页码 S223-S227出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2015.03.199
关键词
Dielectric properties; PLD; Fe doped SrTiO3
资金
- International Science & Technology Cooperation Program of China [2011DFA51880]
- 111 Project [B14040]
- Shaanxi Province International Collaboration Program [2012KW-02]
- Natural Science Foundation of China [5127540]
Three different SrFexTi1-xO3 (x=0.001, 0.005 and 0.01) thin films were deposited on Pt/Ti/SiO2/Si (100) substrates by pulsed laser depositions at different substrate temperatures. The crystalline structure and surface morphology were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The dielectric properties of the films were studied by using Agilent 4980A LCR meter. The XRD results indicate that the films deposited above 650 degrees C shows a cubic perovskite structure with (110) orientation. Leakage current tests show that the conduction mechanism in the three different SrFexTi1-xO3 (x=0.001, 0.005 and 0.01) thin films display ohmic behavior at low electric field and schottky emission at high electric field, respectively. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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