Investigation of the dielectrically modulated electron hole bilayer tunnel field effect transistor for biomolecule detections

This work investigates a Dielectrically Modulated Electron-Hole Bilayer Tunnel Field Effect Transistor (DMEHBTFET) architecture for biosensing applications using extensive numerical device simulation. The proposed DM-EHBTFET structure incorporates extended source and drain pockets in the channel to ensure vertical bandto-band tunneling (BTBT) dominated transduction. The underlying device physics and sensing performance of the proposed DM-EHBTFET has been comprehensively analyzed based on the tunneling length sensitivity and drain current sensitivity, respectively. Finally, an extensive comparative performance study has been undertaken against conventional lateral tunneling (LT) and vertical tunneling (VT) based DMTFETs, as well as reported stateof-art DMTFETs and DMFETs. The results demonstrate that the optimized DM-EHBTFET outperforms both conventional LT-/VT- DMTFETs with more than 500 times and 150 times improvements in sensitivity, respectively, over a range of biomolecule specifications, and more than 100 times sensitivity improvement has been observed in DM-EHBTFET over reported DMFETs/DMTFETs for lower biomolecule dielectric constant.

Automated summary

This work proposes a Dielectrically Modulated Electron-Hole Bilayer Tunnel Field Effect Transistor (DMEHBTFET) architecture for biosensing applications. The proposed structure incorporates extended source and drain pockets to ensure vertical band-to-band tunneling dominated transduction. The device physics and sensing performance of the proposed DM-EHBTFET have been comprehensively analyzed and compared with other tunneling-based DMTFETs and DMFETs. The results show that the optimized DM-EHBTFET outperforms conventional LT-/VT- DMTFETs and reported DMFETs/DMTFETs in terms of sensitivity improvement.