4.7 Article

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Chemistry, Multidisciplinary

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Vladimir G. Dubrovskii et al.

Summary: The study proposed a mixed approach to restrict self-assembly growth of nanomaterials in limited areas, revealing a wide distribution of nanowire diameters but mostly binary crystal phases. Additionally, it was found that thicker GaAs nanowires are zincblende phase while thinner ones are wurtzite phase, contrary to common beliefs.

NANO LETTERS (2021)

Article Chemistry, Multidisciplinary

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Gabin Gregoire et al.

Summary: The selective area growth of InAs nanowires by the catalyst-free vapor-solid method was reported. InAs nanowires with high aspect ratio and hexagonal shape were successfully grown on GaAs and Si substrates. The study demonstrated the high potential of HVPE-grown InAs nanowires for future multispectral photo-detection devices.

CRYSTAL GROWTH & DESIGN (2021)

Article Nanoscience & Nanotechnology

Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption

V. V. Fedorov et al.

Summary: Wurtzite GaP nanowires can be grown on Si substrates without Au catalysts, forming long sections of Wurtzite at 610 degrees C, by abruptly increasing the atomic V/III flux ratio. The optimal growth temperature for Wurtzite nanowires corresponds to the largest diffusion length of Ga adatoms, maintaining the required contact angle for the longest time.

NANOTECHNOLOGY (2021)

Article Chemistry, Multidisciplinary

Phase Selection in Self-catalyzed GaAs Nanowires

Federico Panciera et al.

NANO LETTERS (2020)

Article Chemistry, Multidisciplinary

Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires

Nian Jiang et al.

FRONTIERS IN CHEMISTRY (2020)

Article Chemistry, Physical

Theoretical understanding of the catalyst-free growth mechanism of GaAs < 111 > B nanowires

In Won Yeu et al.

APPLIED SURFACE SCIENCE (2019)

Article Nanoscience & Nanotechnology

Displacement Talbot lithography for nano-engineering of III-nitride materials

Pierre-Marie Coulon et al.

MICROSYSTEMS & NANOENGINEERING (2019)

Article Chemistry, Multidisciplinary

Selective growth of ordered hexagonal InN nanorods

Mohammed Zeghouane et al.

CRYSTENGCOMM (2019)

Article Chemistry, Multidisciplinary

Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

Geoffrey Avit et al.

CRYSTENGCOMM (2018)

Article Nanoscience & Nanotechnology

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy

Zhenning Dong et al.

NANOTECHNOLOGY (2017)

Article Energy & Fuels

A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

Ingvar Aberg et al.

IEEE JOURNAL OF PHOTOVOLTAICS (2016)

Article Chemistry, Multidisciplinary

GaAs/AlGaAs Nanowire Photodetector

Xing Dai et al.

NANO LETTERS (2014)

Article Chemistry, Multidisciplinary

Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius

Evelyne Gil et al.

NANO LETTERS (2014)

Article Chemistry, Multidisciplinary

Understanding the True Shape of Au-Catalyzed GaAs Nanowires

Nian Jiang et al.

NANO LETTERS (2014)

Article Physics, Applied

Effects of twins on the electronic properties of GaAs

Kohei Shimamura et al.

APPLIED PHYSICS LETTERS (2013)

Article Nanoscience & Nanotechnology

Temperature dependence of stacking faults in catalyst-free GaAs nanopillars

Joshua N. Shapiro et al.

NANOTECHNOLOGY (2013)

Article Optics

Single-nanowire solar cells beyond the Shockley-Queisser limit

Peter Krogstrup et al.

NATURE PHOTONICS (2013)

Article Optics

Optically pumped room-temperature GaAs nanowire lasers

Dhruv Saxena et al.

NATURE PHOTONICS (2013)

Article Chemistry, Multidisciplinary

Direct Imaging of Single Au Atoms Within GaAs Nanowires

Maya Bar-Sadan et al.

NANO LETTERS (2012)

Article Multidisciplinary Sciences

A III-V nanowire channel on silicon for high-performance vertical transistors

Katsuhiro Tomioka et al.

NATURE (2012)

Article Materials Science, Multidisciplinary

Role of sidewall diffusion in GaAs nanowire growth: A first-principles study

Volker Pankoke et al.

PHYSICAL REVIEW B (2012)

Article Materials Science, Multidisciplinary

Quantitative description for the growth rate of self-induced GaN nanowires

V. Consonni et al.

PHYSICAL REVIEW B (2012)

Review Materials Science, Multidisciplinary

Selective-area growth of III-V nanowires and their applications

Katsuhiro Tomioka et al.

JOURNAL OF MATERIALS RESEARCH (2011)

Article Chemistry, Multidisciplinary

Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications

Steffen Breuer et al.

NANO LETTERS (2011)

Article Nanoscience & Nanotechnology

Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires

S. Ambrosini et al.

AIP ADVANCES (2011)

Article Chemistry, Multidisciplinary

GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

Katsuhiro Tomioka et al.

NANO LETTERS (2010)

Article Electrochemistry

Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy

M. Cantoro et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2009)

Article Nanoscience & Nanotechnology

Controlled polytypic and twin-plane superlattices in III-V nanowires

P. Caroff et al.

NATURE NANOTECHNOLOGY (2009)

Article Materials Science, Multidisciplinary

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

D. Spirkoska et al.

PHYSICAL REVIEW B (2009)

Article Chemistry, Multidisciplinary

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

Hannah J. Joyce et al.

ADVANCED FUNCTIONAL MATERIALS (2008)

Article Crystallography

Selective-area growth of GaAs and InAs nanowires-homo- and heteroepitaxy using SiNx templates

H. Paetzelt et al.

JOURNAL OF CRYSTAL GROWTH (2008)

Article Nanoscience & Nanotechnology

Control of GaAs nanowire morphology and crystal structure

M. C. Plante et al.

NANOTECHNOLOGY (2008)

Article Materials Science, Multidisciplinary

Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires

V. G. Dubrovskii et al.

PHYSICAL REVIEW B (2008)

Article Physics, Applied

Facet structure of GaAs nanowires grown by molecular beam epitaxy

S. O. Mariager et al.

APPLIED PHYSICS LETTERS (2007)

Article Chemistry, Multidisciplinary

Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates

Soo-Ghang Ihn et al.

NANO LETTERS (2007)

Article Crystallography

Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE

Keitaro Ikejiri et al.

JOURNAL OF CRYSTAL GROWTH (2007)

Article Nanoscience & Nanotechnology

Growth related aspects of epitaxial nanowires

J Johansson et al.

NANOTECHNOLOGY (2006)

Article Physics, Applied

Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

J Noborisaka et al.

APPLIED PHYSICS LETTERS (2005)

Article Physics, Applied

Selective molecular beam epitaxy growth of GaAs hexagonal nanowire networks on (111)B patterned substrates

S Yoshida et al.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2004)

Article Physics, Fluids & Plasmas

Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires

VG Dubrovskii et al.

PHYSICAL REVIEW E (2004)

Article Crystallography

Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

J Motohisa et al.

JOURNAL OF CRYSTAL GROWTH (2004)

Article Materials Science, Multidisciplinary

Surface structures of GaAs{111}A,B-(2X2) -: art. no. 045318

A Ohtake et al.

PHYSICAL REVIEW B (2001)

Article Materials Science, Multidisciplinary

Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE

J Napierala et al.

OPTICAL MATERIALS (2001)

Article Crystallography

Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies

E Gil-Lafon et al.

JOURNAL OF CRYSTAL GROWTH (2001)